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Preparation method of p type copper oxide thin film with low resistivity and high carrier concentration

A high-carrier, low-resistivity technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems that affect the performance of copper oxide electronic and optoelectronic devices, low carrier concentration, and resistivity. Advanced problems, achieve the effect of low resistivity, high carrier concentration and simple operation

Inactive Publication Date: 2016-07-20
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the high resistivity and low carrier concentration of copper oxide thin film materials, the performance of copper oxide electronic and optoelectronic devices is affected.

Method used

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  • Preparation method of p type copper oxide thin film with low resistivity and high carrier concentration
  • Preparation method of p type copper oxide thin film with low resistivity and high carrier concentration
  • Preparation method of p type copper oxide thin film with low resistivity and high carrier concentration

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Ordinary glass substrates were ultrasonically cleaned in acetone, ethanol, and deionized water for 5 minutes in sequence, and dried with nitrogen. Weigh 0.98g of copper oxide powder and 0.02g of metallic lithium powder, place them in a metal mold with a diameter of 2cm, and press the target with a tablet press at a pressure of 10MPa to obtain a copper oxide target doped with 1wt% lithium. The cleaned ordinary glass substrate and the copper oxide target doped with 2wt% lithium were transported to the deposition chamber of the laser pulse deposition equipment by a robot, and the deposition chamber was evacuated to 1×10 by mechanical pump and molecular pump. -4 Pa, adjust the distance between the glass substrate and the copper oxide target to be 6cm, then heat the glass substrate to 500°C, then open the oxygen vent valve, feed oxygen into the deposition chamber, and turn on the mass flow meter to control the oxygen flow to 18sccm, Adjust the pressure of the deposition cham...

Embodiment 2

[0017] In Example 1, the copper oxide target doped with 2 wt % lithium was replaced by the copper oxide target doped with 1 wt % lithium, and other steps were the same as in Example 1 to obtain a p-type copper oxide film.

Embodiment 3

[0019] In Example 1, the copper oxide target doped with 4 wt % lithium was used to replace the copper oxide target doped with 2 wt % lithium, and other steps were the same as in Example 1 to obtain a p-type copper oxide film.

[0020] The inventor used X-ray diffractometer, ultraviolet-visible-near-infrared spectrometer, and Hall effect tester to characterize the p-type copper oxide thin films prepared in Examples 1 to 3 and Comparative Example 1. The results are shown in Figure 1~3 and Table 1.

[0021] Table 1 The electrical properties of the p-type copper oxide film prepared in Examples 1 to 3 and Comparative Example 1

[0022]

[0023] Depend on figure 1 It can be seen that the p-type copper oxide films prepared in Examples 1-3 and Comparative Example 1 all have diffraction peaks of CuO (002) and (111) crystal planes, but compared with the p-type copper oxide films prepared in Comparative Example 1 without lithium Copper thin film, the diffraction peak of the p-type ...

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Abstract

The invention discloses a preparation method for a p type copper oxide thin film with low resistivity and high carrier concentration. The method comprises the step of selecting lithium-doped copper oxide as a target for pulsed laser deposition by selecting a proper lithium doping concentration to obtain the p type copper oxide thin film with low resistivity and high carrier concentration, wherein when the doping amount of metal lithium is 2wt%, the resistivity of the obtained p type copper oxide thin film is 7.56 omega.cm, and the carrier concentration is 7.39*10<19> / cm<3>. The preparation method disclosed by the invention is simple to operate and suitable for industrial preparation of the p type copper oxide thin film with low resistivity and high carrier concentration.

Description

technical field [0001] The invention belongs to the technical field of semiconductor film material preparation, and in particular relates to a preparation method of a p-type copper oxide film with low resistivity and high carrier concentration. Background technique [0002] Copper oxide is an important semiconductor material, and its optical band gap is 1.2eV-1.9eV. It is close to the sunlight energy spectrum, so it has a good absorption ability to sunlight, and its theoretical conversion efficiency is 31%, so it is a relatively ideal solar cell material. And most of the time native copper oxide shows p-type conductivity, which is due to the presence of vacancies in intrinsically defective copper. There are a lot of copper resources on the earth, so copper oxide has the characteristics of low price and low preparation cost, making it a material with wide applications. It has strong applications in solar cells, photocatalysts, electrode materials, resistive memory, supercon...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/34
CPCC23C14/087C23C14/3485
Inventor 高斐向玉春胡西红姜杰轩李娟武慧君郑逍遥
Owner SHAANXI NORMAL UNIV
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