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Method of determining OPC minimum segmentation length

A minimum and wide technology, applied in the photoplate making process of the pattern surface, the original for photomechanical processing, the microlithography exposure equipment, etc., can solve the problem of low OPC correction accuracy, and the target layout pattern cannot be reasonably segmented, etc. problems, to achieve the effect of improving product yield

Active Publication Date: 2021-02-26
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for determining the minimum segment length of OPC, which is used to solve the problem that the target layout graphics cannot be reasonably segmented in the model-based OPC in the prior art, resulting in OPC Fix the problem of low accuracy

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  • Method of determining OPC minimum segmentation length
  • Method of determining OPC minimum segmentation length
  • Method of determining OPC minimum segmentation length

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Embodiment 1

[0040] The present invention provides a method for determining the OPC minimum segment length, such as Figure 7 as shown, Figure 7 Shown is the flow chart of the method for determining the OPC minimum segment length of the present invention. The method at least includes the following steps:

[0041] Step 1. Determine the target layer and the ADI target value corresponding to the target layer (CD of the photoresist pattern after development) as ADItarget; further in the present invention, the ADI target value in step 1 of this embodiment is the graphic line width (The line width of the photoresist pattern after development). Still further in the present invention, the ADI target value ADI target in step 1 of this embodiment is 81nm.

[0042] Step 2, obtain the value range and the value range of the length segment value and the width or spacing segment value based on the OPC-processed test pattern according to the ADI target value; within the value range of the length segme...

Embodiment 2

[0050] The present invention provides a method for determining the OPC minimum segment length, such as Figure 7 as shown, Figure 7 Shown is the flow chart of the method for determining the OPC minimum segment length of the present invention. The method at least includes the following steps:

[0051] Step 1. Determine the target layer and the ADI target value corresponding to the target layer (CD of the photoresist pattern after development) as ADItarget; further in the present invention, the ADI target value in step 1 of this embodiment is the pattern pitch ( The distance between two adjacent photoresist patterns after development) Further in the present invention, the ADI target value ADItarget in step 1 of this embodiment is 81 nm.

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Abstract

The invention provides a method for determining an OPC minimum segmentation length. The method comprises the steps: setting different graph edge segmentation lengths for a series of test graphs, calculating a difference between an OPC simulation value of the test graphs based on a model and light resistance CD data on a wafer, solving a root mean square, and determining the corresponding graph segmentation length to be the minimum segmentation length of the edge of each test graph when the root mean square has the minimum value. A problem that the OPC correction precision is not high due to afact that a target layout graph cannot be reasonably segmented in OPC based on the model is solved, and a product yield is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for determining the minimum split length of OPC. Background technique [0002] With the continuous reduction of process nodes, OPC (Optical Proximity Correction) has become an indispensable link to improve the yield rate in the semiconductor manufacturing process. In the layout publishing process, in order to eliminate the graphics distortion caused by the optical proximity effect, it is necessary to carry out OPC correction on the layout, and then compensate the influence of the optical proximity effect on the graphics. At present, there are mainly two OPC correction methods: rule-based OPC and model-based OPC. Model-based OPC correction has been widely used in the mask plate publishing process, and makes the final pattern on the silicon wafer as close as possible to the design layout. [0003] Considering the continuous reduction of graphics size and the gradu...

Claims

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Application Information

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IPC IPC(8): G03F7/20G03F1/36
CPCG03F7/70441G03F7/70508G03F1/36
Inventor 牛东华张辰明何大权魏芳
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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