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Plasma processing apparatus having flexible dielectric sheet

A plasma and processing device technology, applied in the field of plasma processing devices, can solve the problem of difficulty in changing the distance between upper and lower electrodes, and achieve the effects of strong radio frequency current passing ability, long service life, and prevention of metal pollution

Pending Publication Date: 2021-03-05
ADVANCED MICRO FAB EQUIP INC CHINA
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AI Technical Summary

Problems solved by technology

[0004] However, in the current prior art, the upper electrode and the lower electrode are fixed, and the distance between the upper and lower electrodes is difficult to change. Therefore, in order to meet the processing requirements for different substrates in the same plasma processing equipment, it is necessary to provide a Plasma processing device with adjustable distance between upper and lower electrodes

Method used

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  • Plasma processing apparatus having flexible dielectric sheet
  • Plasma processing apparatus having flexible dielectric sheet
  • Plasma processing apparatus having flexible dielectric sheet

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Embodiment Construction

[0040] A plasma processing device provided by the present invention, with image 3 A capacitively coupled plasma processing device is shown as an example, including a vacuum reaction chamber 10 surrounded by the outer wall of the chamber, a base 20 is arranged in the reaction chamber 10, and the top of the base 20 is fixed by an electrostatic chuck Substrate 40; an inlet device for introducing reaction gas into the reaction chamber 10 is provided above the base 20, such as a shower head 30; a processing area is between the shower head 30 and the base 20, and the processing area Surrounded by the cavity of the reaction chamber 10; one side of the cavity is provided with a film transfer port 50, which is convenient for the manipulator to take and place the substrate 40.

[0041] The shower head 30 is used as the upper electrode, and the base 20 is used as the lower electrode. High-frequency radio frequency power can be applied to the upper electrode or the lower electrode to dis...

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Abstract

The invention relates to a plasma processing apparatus having a flexible dielectric sheet. The upper part of the flexible dielectric sheet is conductively connected with the grounding ring structure,and the lower part is conductively connected with the outer wall of the cavity enclosing the reaction cavity; the grounding ring structure surrounds the periphery of a base of the plasma processing device and can move up and down in a cavity body of the reaction cavity along with the base or be positioned at a set height; the shortest length of the flexible dielectric sheet is matched with the longest distance between the grounding ring structure and the cavity. Through optimization, the flexible dielectric thin sheet has good radio frequency current passing capacity, is convenient to installand long in service life, and does not generate metal pollution.

Description

technical field [0001] The invention relates to a plasma processing device having a flexible dielectric sheet. Background technique [0002] In the existing plasma processing device, for example, a capacitively coupled plasma etching device includes a reaction chamber, the reaction chamber is provided with a base for carrying a substrate, and is used for introducing a reaction gas into the reaction chamber The shower head is used as the upper electrode, and the base is used as the lower electrode. One of the two is applied with high-frequency radio frequency power to dissociate the reaction gas in the processing area into plasma and reach the upper surface of the substrate. The plasma can perform etching and other treatments on the substrate; the plasma processing device has an exhaust area at a suitable position in the lower part of the reaction chamber, and the exhaust area is connected to an external exhaust pump to discharge the reaction gas used in the process and by-p...

Claims

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Application Information

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IPC IPC(8): H01J37/32
CPCH01J37/32449H01J37/32642H01J37/32715H01J37/32743H01J37/32091
Inventor 王伟娜涂乐义梁洁雷仲礼叶如彬
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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