Plasma processor, wafer jacking device and method thereof

Abstract

The invention discloses a plasma processor, a wafer jacking device and a method thereof. A base is arranged in a reaction cavity, a mounting plate is arranged below the base, the base and the mountingplate are provided with through holes to form a guide channel, and the wafer jacking device comprises an ejector pin assembly at least partially located in the guide channel, wherein the ejector pinassembly comprises an ejector pin and an ejector pin central shaft for driving the ejector pin to lift, and a sealing corrugated pipe is arranged outside the ejector pin central shaft; a driving assembly which is used for driving the ejector pin to ascend and descend in the guide channel; a height adjusting assembly which comprises a height-adjustable support, wherein the height-adjustable supportis connected with the center shaft of the ejector pin and an adjusting screw; wherein a height adjusting hole is formed in the mounting plate in a penetrating mode and used for containing a height adjusting tool and rotating the adjusting screw, height adjustment of the height-adjustable support is achieved, and the height adjusting tool is detachably located in the height adjusting hole. According to the invention, the high levelness of the top ends of the plurality of thimbles can be ensured; the height of the thimble can be directly adjusted above the mounting plate in the reactor, so thatthe working efficiency is improved.

Description

technical field [0001] The invention relates to plasma processing, in particular to a plasma processor, a wafer jacking device and a method thereof. Background technique [0002] In semiconductor wafer processing equipment, when the wafer is transported between the transfer chamber and the vacuum processing chamber, it is necessary to use a lifting device to raise or lower the wafer to realize the wafer leaving the surface of the electrostatic chuck or falling to the surface of the mechanical arm, so as to realize the The electrostatic chuck is detached or leaves a height space for the robotic arm to take the sheet. [0003] In the process of electrostatic adsorption and desorption between the wafer and the electrostatic chuck, there are very high requirements on the parallelism and height of the surface of the wafer and the electrostatic chuck, that is, the height of the lifting device supporting the wafer and the top of the three thimbles. There are very high requirements...

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Problems solved by technology

[0003] In the process of electrostatic adsorption and desorption between the wafer and the electrostatic chuck, there are very high requirements on the parallelism and height of the surface of the wafer and the electrostatic chuck, that is, the height of the lifting device supporting the wafer and the top of the three thimbles. There are very high requirements for the parallelism between the plane and the plane on the electrostatic chuck; at the same time, the lifting device needs to move up and down, and the very thin wafer will be slightly shaken or inconsistent due to the movement of the lifting device during the movement of the lifting device. Offset occurs, which also requires high precision in the manufacture and installation of the entire structure; in addition, the lifting device is in the etching environment on the side of the vacuum, and cannot bring the high-purity environment into the process of its moving up and down. particle

[0004] like figure 1 As shown, the traditional jacking device 101 moves up and down through the gas cylinder 106 below it as a whole, but the height of the jacking device 101 cannot be adjusted independently

At the same time, the bellows 104 that moves up and down in the jacking device 101 and its guide bushing 105 are assembled separately. Due to the movability of the bellows 104, a larger gap (gap) is forced to be left between the guide end of the bellows 104 and the guide bushing 105. It is difficult to ensure that the gaps of the three thimbles are consistent during the installation process, and it is difficult to Ensure the concentricity of the upper fixed sealing end and the lower guiding end of the bellows 104, causing the jacking device to tilt, shake, and move unsteadily

In addition, after the jacking device 101 is tilted, it will rub against the electrostatic chuck on the mounting plate 103 and the base plate 102, and there will also be friction and slag between the jacking device 101 and the fixed hole of the bellows 104, which will become Particle sources in a high-purity environment form pollutants; traditional designs rely on existing industrial manufacturing levels and installation accuracy are difficult to avoid these problems

[0005] Based on the above, it can be seen that the existing jacking device does not have an independent height adjustment function, so it is necessary to develop a wafer jacking device with independent height adjustment and vacuum sealing.

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