A kind of semiconductor device with decoupling structure and its manufacturing method

A manufacturing method and semiconductor technology, which are used in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of occupying chip space, inability to flexibly set decoupling capacitors, and disadvantage of chip wiring layers, etc. To ensure the effect of heat dissipation

Active Publication Date: 2022-07-05
大连圣博达科技有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In integrated circuit packaging, a decoupling capacitor is often electrically connected directly above the functional chip, which is not conducive to the wiring layer on the chip, occupies the space directly above the chip, and cannot flexibly set the size of the decoupling capacitor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of semiconductor device with decoupling structure and its manufacturing method
  • A kind of semiconductor device with decoupling structure and its manufacturing method
  • A kind of semiconductor device with decoupling structure and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are some, but not all, embodiments of the present disclosure. Based on the described embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the protection scope of the present disclosure.

[0028] Unless otherwise defined, technical or scientific terms used in this disclosure shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. As used in this disclosure, "first," "second," and similar terms do not denote any order, quantity, or importance, but are merely used t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention provides a semiconductor device with a decoupling structure and a manufacturing method thereof. The invention utilizes the sealing body to realize the trapezoidal cross-sectional shape of the chip assembly, which can ensure the uniformity of electroplating and the reliability of the electrical connection between the capacitor structure and the chip; A capacitor structure, which is electrically connected to the chip, does not occupy the space directly above the chip while ensuring decoupling.

Description

technical field [0001] The present invention relates to the technical field of semiconductor packaging and testing, in particular to a semiconductor device with a decoupling structure and a manufacturing method thereof. Background technique [0002] Due to the existence of parasitic galvanic couplings in integrated circuits, noise will be generated in electronic products, which will affect the integrity of power supplies and signals. Therefore, decoupling capacitors need to be configured to filter out the above-mentioned parasitic galvanic couplings. When an integrated circuit is packaged, a decoupling capacitor is often electrically connected directly above the functional chip, which is unfavorable for the wiring layer on the chip, occupies the space directly above the chip, and cannot flexibly set the size of the decoupling capacitor. SUMMARY OF THE INVENTION [0003] Based on solving the above problems, the present invention provides a method for manufacturing a semicon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/50H01L21/56H01L23/64H01L23/31H01L23/367
CPCH01L21/50H01L21/568H01L23/642H01L23/3107H01L23/367
Inventor 侯红伟
Owner 大连圣博达科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap