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EEPROM programming period control circuit

A technology for controlling circuits and programming cycles, applied in information storage, static memory, instruments, etc., can solve problems such as more resources, and achieve the effect of less resources and simple circuit structure

Active Publication Date: 2021-03-12
NO 47 INST OF CHINA ELECTRONICS TECH GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the existing technology can achieve precise control of erasing and programming time, it requires a lot of resources. The more time required for programming, the more resources are required

Method used

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  • EEPROM programming period control circuit

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Embodiment Construction

[0026] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0027] Such as figure 1 Shown, the timing circuit provided by a kind of microcurrent source (2) of the present invention is used for controlling EEPROM programming time, comprises, reference voltage source (1), microcurrent source (2), timing circuit (3); Reference voltage source (1) Provide a temperature- and power-independent voltage bias for the micro-current source (2); the reference voltage source adopts a traditional bandgap reference to provide a reference voltage independent of the power supply voltage and temperature, and the reference voltage value is about 1.2V; The current source (2) provides pA-level current for the timing circuit (3); the timing circuit uses a pF-level capacitor to realize ms-level timing.

[0028] The reference voltage source (1) adopts a classic bandgap reference structure to provide a reference voltage indepe...

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Abstract

The invention belongs to the field of EEPROM control systems, and particularly relates to a timing circuit system provided by a micro-current source. The circuit comprises a reference voltage source,a micro-current source and a timing circuit, the reference voltage source provides voltage bias irrelevant to the temperature and the power supply for the micro-current source; the micro-current source provides pA-level current for the timing circuit; and the timing circuit realizes ms-level timing by using a pF-level capacitor. According to the invention, EEPROM erasing and programming time control are realized by using a very simple circuit structure. The generated time is slightly changed along with the temperature. Resources involved in the invention are few.

Description

technical field [0001] The invention belongs to the field of EEPROM control systems, in particular to a timing circuit system provided by a microcurrent source. Background technique [0002] At present, digital storage technology is mainly divided into three types: magnetic type, photoelectric type and semiconductor type. Semiconductor storage technology is basically divided into two types: volatile (Volatile) and non-volatile (Non-volatile). Volatile memory technology is relatively mature and is also the mainstream of semiconductor storage technology at present, including DRAM and SRAM, etc.; non-volatile memory Technologies include past mask ROM, EPROM, EEPROM, Flash (flash), and emerging FRAM (ferroelectric memory), MRAM (magnetic memory) and OUM (phase change memory). Features such as non-volatility, fast access speed, low cost, simple manufacturing process, high data storage density, low power consumption, and unlimited erasing and rewriting are the key points that fut...

Claims

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Application Information

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IPC IPC(8): G11C16/32G11C16/30
CPCG11C16/32G11C16/30Y02D10/00
Inventor 王佳宁张振华宋扬
Owner NO 47 INST OF CHINA ELECTRONICS TECH GRP