Electro-optical crystal film, preparation method and electronic component

Abstract

The invention discloses an electro-optic crystal film, a preparation method and an electronic component. The preparation method comprises the following steps: preparing an isolation layer on a substrate layer; preparing a functional film layer on the isolation layer by using an ion implantation method and a bonding method, or by using the bonding method and a grinding and polishing method; whereinafter the isolation layer and the thin film substrate are bonded by adopting a bonding method, pressure stress is formed in the thin film substrate, tensile stress is formed in the isolation layer, and mechanical pressure stress or mechanical tensile stress is further applied to the thin film substrate and the isolation layer, or thermal expansion coefficients of the isolation layer and the thinfilm substrate are utilized, to control the temperature before and after bonding, so that mutually-contained pressure stress and tensile stress are formed in the isolation layer and the thin film substrate. The purpose of improving the refractive index difference between the isolation layer and the thin film substrate is achieved, the preparation method is simple, two materials with larger refractive index difference do not need to be excavated, and only existing conventional materials are used.

Description

technical field [0001] The application belongs to the field of semiconductor element preparation, and in particular relates to an electro-optic crystal thin film, a preparation method and electronic components. Background technique [0002] Electro-optic crystals, such as lithium niobate and lithium tantalate crystals, have been widely used in the electronics industry due to their piezoelectricity, electro-optic properties, photorefractive effect, and ferroelectricity. Especially in the direction of optoelectronics, because of its large electro-optic coefficient, high refractive index, good thermal stability, and excellent nonlinear optical properties, it has become one of the most important materials in the fields of electro-optic modulators, wavelength conversion devices, and optical switches. One, known as the silicon material in the direction of optoelectronics. [0003] An electro-optic crystal thin film disclosed in the prior art includes a substrate layer, an isolati...

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Problems solved by technology

[0005] In order to solve the existing technology, the refractive index difference is constrained by the refractive index of the lithium niobate crystal film layer and the isolation layer itself, and to obtain a better optical signal confinement effect, it is necessary to excavate two types with a larger refractive index difference. Materials, this is a long and difficult subject, currently unable to provide a technical problem of electro-optic crystal film with greater refractive index difference, the application provides an electro-optic crystal film, preparation method and electronic components

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