Radio frequency power amplification circuit based on artificial nonlinear matching network

Abstract

The invention discloses a radio frequency power amplification circuit based on an artificial nonlinear matching network, and the input end of a power amplification transistor is connected with a radiofrequency signal input port and a radio frequency detection unit through an input matching network and a phase compensation network. The output end of the power amplifier transistor is connected witha radio frequency signal output port through an artificial nonlinear matching network; wherein the radio frequency detection unit is respectively connected with the artificial nonlinear matching network and the phase compensation network after sequentially passing through the comparison judgment unit, the cross-coupled logic inverter and the control signal generation and buffer unit, and the connection of elements in the artificial nonlinear matching network is configured through a power detection and logic control radio frequency switch. The power amplifier transistor can obtain the optimalload impedance at two or more power points. According to the invention, the power amplifier transistor can obtain the optimal load impedance at two or more power points, and a single-branch and large-bandwidth scheme is provided for the design and implementation of a radio frequency power amplification circuit with enhanced fallback efficiency.

Description

technical field [0001] The invention belongs to the technical field of radio frequency communication, and in particular relates to a radio frequency power amplifying circuit based on an artificial nonlinear matching network. Background technique [0002] Complex high-order modulated signals are widely used in advanced wireless communications, and RF power amplifiers with high back-off efficiency become necessary. [0003] At present, the mainstream technical approaches to improve power amplifier fallback efficiency mainly include the following: one is the Doherty structure and out-of-phase structure based on active load impedance modulation technology; the other is envelope tracking power amplifier based on power source modulation technology, class G power amplifier; the third is the matching structure using the nonlinear junction capacitance of the diode. [0004] Among them, the Doherty and out-of-phase power amplifier structures include at least two power amplification b...

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Problems solved by technology

[0004] Among them, the Doherty and out-of-phase power amplifier structures include at least two power amplification branches, which effectively improve the back-off efficiency based on active load impedance modulation, but the increase in the complexity of the circuit structure and the increase in the circuit size At the cost of increasing the cost of products and products; in the power modulation type power amplifier, the way of dynamically modulating the working voltage according to the signal power level reduces the power consumption of the power amplifier in the fallback state, but its working mechanism depends on a specially designed power supply The modulation circuit, on the one hand, increases the design complexity and circuit complexity, on the other hand, the limited operating bandwidth of the power modulation circuit limits the operating bandwidth of the power amplifier

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