A method for optimizing the magnetic properties of cobalt-based thin-film inductor materials using active metal oxides

An active metal and oxide technology, applied in the application of magnetic films to substrates, inductance/transformer/magnet manufacturing, circuits, etc., can solve problems such as limiting the coercivity control ability of CoZrTa films, and achieve increased range and controllability. The effect of sex, liveliness, and simple process

Active Publication Date: 2021-12-24
广东麦格智芯精密仪器有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most of the research work is to adjust the magnetic properties of CoZrTa by choosing covalent oxides as the barrier interlayer [J.Appl.Phys.98(2006)08F109; J.Appl.Phys.113(2013)17A343; AIP Advances 7(2017)056414], the selection of a single barrier layer type greatly limits the ability to adjust the coercivity of CoZrTa thin films

Method used

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  • A method for optimizing the magnetic properties of cobalt-based thin-film inductor materials using active metal oxides
  • A method for optimizing the magnetic properties of cobalt-based thin-film inductor materials using active metal oxides

Examples

Experimental program
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Effect test

Embodiment 1

[0033] S1. Clean the surface of the CoZrTa target, the specific cleaning process is as follows:

[0034] (1) Ultrasonic cleaning with acetone alcohol;

[0035] (2) Ultrasonic cleaning with deionized water;

[0036] (3) Finally blow dry by nitrogen.

[0037] S2. Using the magnetron sputtering method, deposit CoZrTa and MgO sequentially on the silicon substrate to form a CoZrTa / MgO structure; first the CoZrTa target is bombarded for 2 minutes and 50 seconds, and then the MgO target is bombarded for 7 minutes and 48 seconds. Bottom vacuum 1×10 -5 Pa, the argon pressure during sputtering is 0.3Pa;

[0038] S3. After the deposition is completed, the sample is subjected to vacuum heat treatment. The process is: the vacuum degree is 1×10 -5 Pa, the heat treatment temperature is 250°C, and the holding time is 30 minutes.

Embodiment 2

[0047] S1. Clean the surface of the CoZrTa target, the specific cleaning process is as follows:

[0048] (1) Ultrasonic cleaning with acetone alcohol;

[0049] (2) Ultrasonic cleaning with deionized water;

[0050] (3) Finally blow dry by nitrogen.

[0051] S2. Using the magnetron sputtering method, sequentially deposit CoZrTa and HfO on the silicon substrate 2 , forming CoZrTa / HfO 2 Structure; first CoZrTa target bombardment for 3 minutes, then HfO 2 The target is bombarded for 3 minutes and 1 second, and the background vacuum of the sputtering chamber is 1×10 -5 Pa, the argon pressure during sputtering is 0.3Pa;

[0052] S3. After the deposition is completed, the sample is subjected to vacuum heat treatment. The process is: the vacuum degree is 1×10 -5 Pa, the heat treatment temperature is 250°C, and the holding time is 30 minutes.

Embodiment 3

[0064] S1. Clean the surface of the CoZrTaB target, the specific cleaning process is as follows:

[0065] (1) Ultrasonic cleaning with acetone alcohol;

[0066] (2) Ultrasonic cleaning with deionized water;

[0067] (3) Finally blow dry by nitrogen.

[0068] S2. Using the magnetron sputtering method, sequentially deposit CoZrTaB and HfO on the silicon substrate 2 , forming CoZrTaB / HfO 2 Structure; first CoZrTaB target bombardment for 3 minutes and 7 seconds, then HfO 2 The target is bombarded for 3 minutes and 1 second, and the background vacuum of the sputtering chamber is 1×10 -5 Pa, the argon pressure during sputtering is 0.3Pa;

[0069] S3. After the deposition is completed, the sample is subjected to vacuum heat treatment. The process is: the vacuum degree is 1×10 -5 Pa, the heat treatment temperature is 250°C, and the holding time is 30 minutes.

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Abstract

The invention discloses a method for optimizing the magnetic properties of a cobalt-based thin-film inductance material by using an active metal oxide, and belongs to the technical field of information storage and inductance. The present invention selects the ionic oxide composed of more active metals as the barrier layer, and uses orbital hybridization engineering to realize the control of the soft magnetic properties of the film, obtains a beneficial and moderate Co-O orbital hybridization state, and then optimizes the ferromagnetism Magnetic properties of thin film materials. Ionic oxides have low chemical bond energy and strong activity. Compared with Al metal, the more active metal Hf or Mg is easier to capture O from Co, which makes the interface oxidation state show different degrees of hypoxia, aerobic, and hyperoxic. Oxygen increases the adjustment range and controllability, so that the orbital hybridization state of Co-O can be moderately changed, thereby causing changes in the magnetic properties of Co-based soft magnetic materials / MO, with simple process, convenient control and high efficiency , low cost and other advantages, suitable for application in future information storage and inductive technology.

Description

technical field [0001] The invention belongs to the technical field of information storage and inductance, and specifically relates to a method for regulating the Co-based soft magnetic / non-magnetic interface structure by selecting ionic active metal oxides, thereby optimizing the magnetic performance of the soft magnetic film. Background technique [0002] In recent years, with the rapid development of electronic information technology, the arrival of the 5G era not only provides great convenience for people's production and life, such as the application of smart home, unmanned driving, wearable devices, etc., but also makes the receiving equipment of information terminals welcome With the huge innovation coming, higher requirements are put forward for the performance, reliability, miniaturization and energy saving of advanced electronic components such as magnetic sensors, inductors and transformers. Therefore, it is necessary to continuously improve the soft magnetic prop...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F41/18H01F41/22
CPCH01F41/18H01F41/183H01F41/22
Inventor 徐秀兰于广华冯春
Owner 广东麦格智芯精密仪器有限公司
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