Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device

A semiconductor and conductive type technology, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problem of increased on-resistance

Pending Publication Date: 2021-03-16
KK TOSHIBA
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conversely, when the impurity concentration in the drift region is lowered to increase the withstand voltage, the on-resistance increases.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0028] The semiconductor device according to the first embodiment includes: a semiconductor layer having a first surface and a second surface facing the first surface; Extending in the first direction; the second groove, located on the side of the first surface, extending in the second direction perpendicular to the first direction, intersecting the first groove; the first semiconductor region of the first conductivity type; the second groove The second semiconductor region of the 2 conductivity type is located between the first semiconductor region and the first surface; and the third semiconductor region of the first conductivity type is located between the second semiconductor region and the first surface; the gate electrode is located on the first surface In the trench; the field plate electrode, in the first trench, is located between the gate electrode and the second surface; the metal region, located in the second trench, is electrically connected to the second semicondu...

no. 2 Embodiment approach

[0093] The semiconductor device according to the second embodiment differs from the first embodiment in that the first thickness of the gate insulating layer between the gate electrode and the semiconductor layer is thinner than the second thickness of the gate insulating layer between the gate electrode and the metal region. Different types of semiconductor devices. In addition, the semiconductor device according to the second embodiment differs from the first embodiment in that the width in the second direction of the portion of the gate electrode facing the semiconductor layer is greater than the width in the second direction of the portion of the gate electrode facing the metal region. different semiconductor devices. Hereinafter, descriptions may be partially omitted regarding content that overlaps with the semiconductor device of the first embodiment.

[0094] The semiconductor device according to the second embodiment is a vertical transistor in which a gate electrode ...

no. 3 Embodiment approach

[0108] The semiconductor device of the third embodiment differs from the semiconductor device of the first embodiment in that the gate electrode has a first region and a second region separated from each other in the second direction in the first trench. Hereinafter, descriptions may be partially omitted regarding content that overlaps with the semiconductor device of the first embodiment.

[0109] The semiconductor device according to the third embodiment is a vertical transistor in which a gate electrode is buried in a trench. The semiconductor device of the third embodiment is a vertical power MOSFET. The semiconductor device of the third embodiment is a MOSFET 300 .

[0110] Figure 11 It is a schematic cross-sectional view of the semiconductor device of the third embodiment. Figure 11 is the same as the first embodiment figure 2 corresponding figure.

[0111] Figure 12 It is a schematic plan view of the semiconductor device of the third embodiment. Figure 12 is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An embodiment of the invention relates to a semiconductor device. Provided is a semiconductor device capable of reducing on-resistance. According to one embodiment, a semiconductor device includes: asemiconductor layer; a gate electrode located in a first trench; a field plate electrode; a metal region located in a second trench and electrically connected to a second semiconductor region; a gateinsulating layer between the gate electrode and the semiconductor layer; a field plate insulating layer between the field plate electrode and the semiconductor layer; a first electrode electrically connected to the third semiconductor region and the metal region; and a second electrode, wherein the semiconductor layer has: the first trench; the second trench crossing the first trench; a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type.

Description

[0001] (References for related applications) [0002] This application is based on Japanese patent application 2019-167645 (filing date: September 13, 2019), from which it enjoys the benefit of priority. This application, by reference to this application, includes the entire contents of this application. technical field [0003] Embodiments of the present invention relate to semiconductor devices. Background technique [0004] For miniaturization and performance enhancement of transistors, vertical transistors in which gate electrodes are buried in trenches are used. In the vertical transistor, there is a trade-off relationship between the drain-source breakdown voltage (hereinafter, also simply referred to as “breakdown voltage”) and the on-resistance. That is, when the impurity concentration of the drift region is increased in order to reduce the on-resistance, the withstand voltage is lowered. Conversely, when the impurity concentration in the drift region is lowered t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423
CPCH01L29/7813H01L29/4236H01L29/1095H01L29/407H01L29/0696H01L29/42368H01L29/41766H01L29/42376H01L29/7825H01L29/7827H10B63/34
Inventor 雁木比吕
Owner KK TOSHIBA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com