Organic light-emitting device
An electroluminescent device and electroluminescent technology, which are applied in the direction of electro-solid devices, electrical components, semiconductor devices, etc., can solve the problems of limited use and shape, and achieve the effects of reducing dependence, improving short-circuit prevention effect, and simple structure.
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Embodiment 1
[0043] In this embodiment, the neutron electrode material is metal conductor Al with a thickness of 50nm, the glass transition temperature Tg of the dielectric material layer is 200°C, and the second electrode is Al with a thickness of 3000nm.
[0044] After testing the light-emitting device of Example 1, its parameters are as follows:
[0045] serial number Brightness uniformity of the screen Example 1 80%
[0046] Preferably, the material of the sub-electrode used in the above embodiment is metal conductor Al, and in other embodiments, one of metal conductors such as Ag, Mg and Au may also be used.
[0047] Preferably, the thickness of the sub-electrode used in the above embodiment is 50 nm, and in other embodiments, other values within the thickness range of 1 nm to 50 nm can also be selected.
Embodiment 2
[0049] Such as figure 2 As shown, on the basis of Embodiment 1, the sub-electrode structure also includes outer electrodes, and part of the outer electrodes and sub-electrodes are arranged on the dielectric material layer, and the outer electrodes and sub-electrodes form an electrical sexual connection.
[0050] In this embodiment, the sub-electrode is made of metal conductor Al with a thickness of 50 nm, the glass transition temperature Tg of the dielectric material layer is 200° C., and the second electrode is selected as Al with a thickness of 3000 nm.
[0051] serial number Brightness uniformity of the screen Embodiment 2 (including outer electrode) 90%
[0052] Comparing Example 1 and Example 2, the addition of outer layer electrodes in Example 2 can improve the brightness uniformity of the device.
[0053] Preferably, the glass transition temperature Tg of the dielectric material layer used in the above embodiment is 200° C., and in other embodim...
Embodiment 3
[0055] The difference from Example 2 is that the sub-electrode in Example 3 uses a metal oxide conductor, the specific sub-electrode material is ITO, the thickness is 150nm, the glass transition temperature Tg of the dielectric material layer is 200 ° C, the second electrode is selected It is Al with a thickness of 3000nm.
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