Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flash memory chip analysis method and device, electronic equipment and storage medium

A flash memory chip and analysis method technology, applied in the computer field, can solve the problems of unstable use and low service life of flash memory chips, and achieve the effect of improving service life and stability

Inactive Publication Date: 2021-04-02
SHENZHEN SHICHUANGYI ELECTRONICS
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the embodiments of the present invention is to provide an analysis method for flash memory chips, aiming to solve the problems of unstable use and low service life of existing flash memory chips on different test scenarios and platforms

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory chip analysis method and device, electronic equipment and storage medium
  • Flash memory chip analysis method and device, electronic equipment and storage medium
  • Flash memory chip analysis method and device, electronic equipment and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] For a flash memory chip analysis method provided in the first embodiment of the present invention, please refer to figure 1 , the method includes step S01 to step S03:

[0043] Step S01 , performing a data retention capability test on the flash memory chip through the BCH code.

[0044] Step S02 , baking the memory chips in different states, and at the same time testing the data retention capabilities of the physical memory blocks in the flash memory chip with different erasing times through the BCH code.

[0045] Step S03, recording and analyzing the test results of the flash memory chip at multiple time points to obtain the characteristics of the flash memory chip.

[0046] Specifically, in this embodiment, the data retention capability (i.e. data retention) test of the flash chip with low erasing times is tested, wherein the flashing chip with low erasing times is a flash memory chip that has just been produced and processed, and the number of times of use is small,...

Embodiment 2

[0050] For an embodiment of the invention, see figure 2 , before step S02, the method also includes step S04 to step S05:

[0051] Step S04, burning the firmware program into the flash memory chip.

[0052] Step S05, writing test item data into the flash memory chip.

[0053] Specifically, use the characteristic analysis software to burn the firmware program to the flash memory chip and perform the erase, write and read test of the private command, so that the number of erases of the specified physical memory block reaches the required value, read the original ECC data and put it into a constant temperature and humidity box. Rest Bake simulates actual data placement for one, two, or many years in actual use.

Embodiment 3

[0055] In another embodiment of the present invention, after the step of burning the firmware program into the flash memory chip, the method further includes the following steps:

[0056] Step S06 , testing the memory chip in a first state, the first state being that the memory pages of the plurality of physical memory blocks in the flash memory chip are not full.

[0057] Specifically, when each storage page of the physical storage block is filled with data, the physical storage block is in a closed state; when there are some blank storage pages in the physical storage block, the physical storage block is in an open state;

[0058] Through the above method, when using the simulation platform, if the written data exceeds the storage capacity of one or more physical storage blocks, after firmware processing, part of the physical lookup of the flash memory will be closed, and some physical storage blocks will be closed due to If the data is not full, it is in an open state to si...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is applicable to the technical field of computers, and provides a flash memory chip analysis method and device, electronic equipment and a storage medium. The method comprises the following steps: performing a data retention capability test on a flash memory chip through a BCH code; baking the storage chip in different states, and testing the data retention capability of physical storage blocks with different erasure times in the flash memory chip through the BCH code; and recording and analyzing test results of the flash memory chip at a plurality of time points to obtain characteristics of the flash memory chip. According to the method provided by the invention, the problems of unstable use and short service life of the existing flash memory core in different test scenes and platforms are solved.

Description

technical field [0001] The invention belongs to the technical field of computers, and in particular relates to a flash memory chip analysis method, device, electronic equipment and storage medium. Background technique [0002] For the data error correction in the flash memory chip, the two mainstream error correction codes are BCH code and LDPC code. LDPC code (Low Density Parity Check Code, LDPC) is a low density parity check code, which is a linear block code with a sparse check matrix, with low decoding complexity and flexible structure. BCH code (abbreviation of Bose, Ray-Chaudhuri, Hocquenghem) is a cyclic code that can correct multiple random errors. It has a strict algebraic structure and strong error correction capability, especially in short and medium code lengths. It is close to the theoretical value and is one of the linear block codes. [0003] Flash wafers produced by different manufacturers in the market have different processes and quality, and different fl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C29/42G11C29/50
CPCG11C29/42G11C29/50
Inventor 倪黄忠范厚奎
Owner SHENZHEN SHICHUANGYI ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products