Quick-opening uniform-conduction bidirectional electrostatic surge protection IC

A surge protection and electrostatic technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of high trigger voltage, low maintenance voltage, and gate oxygen breakdown of the protection circuit, so as to improve the turn-on speed and enhance the current conduction. The effect of uniformity and enhanced ESD robustness

Pending Publication Date: 2021-04-02
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problems of low maintenance voltage and high trigger voltage of traditional SCR, which easily lead to breakdown of the gate oxid

Method used

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  • Quick-opening uniform-conduction bidirectional electrostatic surge protection IC
  • Quick-opening uniform-conduction bidirectional electrostatic surge protection IC
  • Quick-opening uniform-conduction bidirectional electrostatic surge protection IC

Examples

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Embodiment Construction

[0033] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail;

[0034] The example of the present invention provides a fast turn-on uniform conduction bidirectional ESD / TVS protection IC for high voltage applications above 18V. Compared with the traditional SCR, the example of the present invention realizes the bidirectional ESD / TVS protection IC for the application circuit with an operating voltage higher than 18V by citing the reverse bias unit composed of the N-type buried layer and the P well; by adjusting the width of the P well, Adjust the voltage clamping capability of the bidirectional ESD / TVS protection IC of the present invention; by introducing an open NMOS, enhance the uniformity of current conduction on the surface of the P well, and improve the opening speed of the bidirectional ESD / TVS protection IC of the present invention. By introducing a GGNMOS and an on-state NMOS cascaded electrical stru...

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Abstract

The invention discloses a quick-opening uniform-conduction bidirectional electrostatic surge protection IC, and belongs to the field of electrostatic discharge and surge protection of circuits. By introducing a reverse bias unit composed of an N type buried layer and a P well, bidirectional electrostatic surge protection is carried out on an application circuit of which the working voltage is higher than 18V; by adjusting the width of the P trap, the voltage clamping capability of the bidirectional electrostatic surge protection IC is adjusted. By introducing the on-state NMOS, the current conduction uniformity of the surface of the P trap is enhanced, and the starting speed of the bidirectional electrostatic surge protection IC is improved. By introducing a cascaded electrical structure of a GGNMOS and an on-state NMOS, the surface current discharge capability of the bidirectional electrostatic surge protection IC can be enhanced, and the ESD robustness of the bidirectional electrostatic surge protection IC can also be enhanced. On the premise that the area of the chip is not increased, the bidirectional electrostatic surge protection IC also has bidirectional ESD/TVS protection performance.

Description

technical field [0001] The invention belongs to the field of electrostatic discharge and surge protection of circuits, and relates to an integrated circuit for electrostatic surge protection, in particular to a bidirectional electrostatic surge protection IC with built-in MOS auxiliary trigger SCR for fast opening and uniform conduction, which can be used to improve on-chip IC and electronics system reliability. Background technique [0002] Electrostatic discharge and circuit surge are common physical phenomena in electronic products, which are mainly caused by charge transfer or instantaneous high-voltage or high-current discharge when objects carrying different electrostatic energies are close to each other or in direct contact. Electrostatic discharge occurs in the entire process of integrated circuits from manufacturing to use; electronic products often experience surges during power-on, power-off, or signal conversion. Therefore, electrostatic discharge (ESD) and surg...

Claims

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Application Information

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IPC IPC(8): H01L27/02
CPCH01L27/0255H01L27/0262H01L27/0266H01L27/0296
Inventor 梁海莲杨燕妮顾晓峰
Owner JIANGNAN UNIV
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