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light-emitting device

A light-emitting device and technology of encapsulation layer

Active Publication Date: 2022-05-10
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the cavity and the certain thickness of the ceramic bowl, the package structure is too large, and there is no way to adjust the light angle and spatial distribution of light intensity of the package.
[0003] In order to change the light-emitting angle, a quartz glass lens is usually added on the light-emitting surface, which further increases the thickness of the package, and the cost of quartz glass is high

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0037] Please see attached figure 2 , this embodiment discloses an ultraviolet packaging device, including: a packaging substrate 210, a patterned conductive layer 230 located on the upper surface of the substrate, an LED chip disposed on the substrate 210 and electrically connected to the conductive layer 230 220, and the encapsulation layer 240 covering the upper surface of the substrate and the LED chip 220, the encapsulation layer 240 forms an optical structure at the position corresponding to the LED chip 220, and the optical structure has a curved surface above the LED chip and / or on the side wall, which can be adjusted Lighting angle and spatial distribution of light intensity of the device.

[0038] Specifically, the substrate 210 includes an upper surface and a lower surface, and the substrate 210 may be made of materials commonly used in the field, such as ceramics or silicon, preferably a ceramic substrate. The size of the substrate can be selected according to re...

Embodiment 2

[0053] Figure 7 A light emitting device embodied in accordance with the present invention is shown. exist Figure 4 In the light-emitting device shown, the thickness of the LED chip is more than 300 μm, and the thickness T of the encapsulation layer 240 30 Less than the thickness of the LED chip, in the light emitting device shown in this embodiment, the thickness T of the LED chip 20 is less than 300 μm, for example, 150 μm to 200 μm, or 200 μm to 300 μm, the first thickness T of the encapsulation layer 240 31 with the thickness T of the LED chip 220 20 The relationship is preferably 1.2T 20 ≥T 31 ≥0.5T 20 , at this time, the encapsulation layer 240 can better cover the LED chip 240, and form an optical structure with a curved surface on the LED chip, such as T 31 ≈T 20 . Further, 0μm≤T 31 -T 32 ≤50 μm, that is, the thickness of the encapsulation layer 240 on the upper surface of the LED chip is relatively uniform. Further, the thickness of the encapsulation lay...

Embodiment 3

[0057] Figure 8 A light emitting device embodied in accordance with the present invention is shown. In this embodiment, on the basis of Embodiment 1, a series of additional grooves 2313 are arranged on the edge region 233 of the patterned conductive layer 230 on the substrate. The depth of the series of additional grooves 2313 is preferably half the thickness of the patterned conductive layer. Above, it can also be greater than or equal to the thickness of the conductive layer 230 , and the encapsulation layer 240 fills the series of additional grooves 2313 , thereby increasing the bonding force between the encapsulation layer 240 and the substrate 210 .

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Abstract

The invention discloses a light-emitting device, the light-emitting device includes a package substrate, has a first surface and a second surface opposite, a patterned conductive layer is arranged on the first surface, and the patterned conductive layer passes through a spacer at least Divided into two first and second regions that are electrically isolated from each other; LED chips, mounted on the patterned conductive layer, have opposite upper surfaces, lower surfaces, and sidewalls, and the lower surface is provided with a first electrode and the second electrode, wherein the first electrode is electrically connected to the first region, and the second electrode is electrically connected to the second region; the encapsulation layer covers the LED chip and the first surface of the substrate, and the encapsulation layer is in The thickness directly above the LED chip is greater than or equal to 0.5 times the thickness of the LED chip and less than or equal to 1.2 times the thickness of the LED chip.

Description

technical field [0001] The invention relates to the technical field of LED packaging, in particular to a light emitting device. Background technique [0002] The existing conventional deep-ultraviolet LED packaging structure mainly uses a ceramic bowl as a carrier substrate and a quartz glass packaging cover. Specifically, the ultraviolet LED chip 120 with a flip-chip structure is solidified on the package by solder paste or eutectic soldering. In the bowl of the substrate 110, the chip electrode of the ultraviolet LED chip 120 and the substrate electrode 130 in the bowl are bonded and fixed, and then a quartz glass plate 140 is fixed at the opening of the bowl to form an airtight space in the bowl. chambers such as figure 1 shown. However, due to the cavity and the certain thickness of the ceramic bowl, the packaging structure is too large, and there is no way to adjust the light-emitting angle and spatial distribution of light intensity of the package. [0003] In order...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/62H01L33/54H01L33/56H01L33/58
CPCH01L33/48H01L33/62H01L33/54H01L33/56H01L33/58
Inventor 林秋霞黄森鹏刘健余长治徐宸科
Owner QUANZHOU SANAN SEMICON TECH CO LTD
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