Lamb wave resonator with POI structure

A Lamb wave resonator and resonator technology, applied in the field of mobile phone radio frequency, can solve problems such as stray effects, affect the performance of the resonator, reduce the Q value, etc., and achieve the effect of high electromechanical coupling coefficient

Pending Publication Date: 2021-04-02
GUANGDONG CANCHIP TECH CO LTD
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Problems solved by technology

[0002] The development of 5G mobile phone filters requires lower loss, higher frequency and larger bandwidth, which poses serious challenges to the existing surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies, which are usually affected by more stray effect limitation
The presence of spurious modes can affect the performance of the resonator, such as reducing the Q value (quality factor)

Method used

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  • Lamb wave resonator with POI structure
  • Lamb wave resonator with POI structure
  • Lamb wave resonator with POI structure

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Embodiment Construction

[0048] The present invention will be described in detail below in conjunction with the accompanying drawings, and the features of the present invention will be further revealed in the following detailed description.

[0049] figure 1 It is a schematic diagram of the structure of a surface acoustic wave interdigital transducer (IDT). Such as figure 1 As shown in , on the surface of the piezoelectric substrate, deposit a layer of metal film, and then use the photolithography method in the semiconductor planar process to obtain a set of comb-shaped intersecting metal electrodes. These metal electrodes shaped like human fingers are intersected with each other, and bus bars at both ends are connected together to form two stages of the device, thereby obtaining an interdigital transducer. exist figure 1 In the example of , a total of 6 metal electrodes labeled 1-6 are shown, indicating that the number of interdigital electrodes of this IDT is 6, and the electrodes with odd number...

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Abstract

The invention provides a Lamb wave resonator with a POI structure. The Lamb wave resonator may include: a substrate of high acoustic velocity material; a piezoelectric layer which is located above thesubstrate made of the high-sound-velocity material, wherein a first interdigital transducer and a second interdigital transducer are arranged on the upper surface and the lower surface of the piezoelectric layer respectively, and interdigital electrodes of the first interdigital transducer and the second interdigital transducer are opposite to each other in the stacking direction across the piezoelectric layer, and have the same electrode width, electrode thickness, electrode spacing, duty ratio eta and excitation sound wave wavelength lambda, wherein the duty ratio eta = electrode width/(electrode width + electrode spacing), the material of the piezoelectric layer is YX-LiNbO3 with a cut angle theta, and the values of the cut angle theta and the duty ratio eta are 30 degrees < = theta <= 60 degrees respectively; and eta is equal to 0.2, 0.4 to 0.6 or 0.8 to 0.9.

Description

technical field [0001] The invention relates to the radio frequency field of mobile phones, and more specifically, to a Lamb wave resonator with a POI structure. Background technique [0002] The development of 5G mobile phone filters requires lower loss, higher frequency and larger bandwidth, which poses serious challenges to the existing surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies, which are usually affected by more stray Effect limitation. In order to meet this demand, the recently proposed Lamb (Lamb) wave structure, which mainly adopts the plate wave mode, has a high sound velocity, and shows application advantages in sub-6GHz and millimeter wave mobile communications. In a Lamb wave resonator, the main mode is the Lamb wave, and the modes such as the Rayleigh wave are the spurious modes. The presence of spurious modes can affect the performance of the resonator, such as reducing the Q value (quality factor). How to improve the electromechan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/145H03H9/25
CPCH03H9/145H03H9/25
Inventor 李红浪许欣柯亚兵
Owner GUANGDONG CANCHIP TECH CO LTD
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