Ultrahigh-frequency surface-mounted ceramic vertical interconnection structure and packaging structure
An interconnected structure, ultra-high frequency technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of large conductor square resistance, signal delay, large signal transmission loss, etc., to achieve easy operation, good vertical transmission, design simple effect
Pending Publication Date: 2021-04-06
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Problems solved by technology
[0003] The purpose of the present invention is to provide a vertical interconnection structure of ultra-high frequency surface mount ceramics, which aims to solve the technical problems of large conductor square resistance inside the HTCC substrate, large signal transmission loss and signal delay at high frequencies
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[0025] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0026] Please also refer to Figure 1 to Figure 7 , the UHF surface-mount ceramic vertical interconnection structure provided by the present invention will now be described. The vertical interconnection structure of the UHF surface mount ceramics includes a ceramic medium 1, a front pin pad 2, a back pin pad 3 and a coaxial structure, the front pin pad 2 is arranged on the front of the ceramic medium 1, There is a GND area around the front pin pad 2; the back pin pad 3 is set on the back of the ceramic medium 1, arranged in parallel with the front pin pad 2, and t...
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Abstract
The invention provides an ultrahigh-frequency surface-mounted ceramic vertical interconnection structure and a packaging structure, belonging to the technical field of chip packaging microwave signal interconnection. The ultrahigh-frequency surface-mounted ceramic vertical interconnection structure comprises a ceramic medium, a front pin bonding pad, a back pin bonding pad and a similar coaxial structure, wherein the front pin bonding pad is arranged on the front surface of the ceramic medium, and a GND region is arranged around the front pin bonding pad; the back pin bonding pad is arranged on the back surface of the ceramic medium, and another GND region is arranged around the back pin bonding pad; the similar coaxial structure comprises a radio frequency signal vertical transition hole and a grounding vertical transition hole which are arranged in parallel; and the radio frequency signal vertical transition hole is arranged to be perpendicular to the ceramic front pin bonding pad. The packaging structure comprises the ultrahigh-frequency surface-mounted ceramic vertical interconnection structure. The ultrahigh-frequency surface-mounted ceramic vertical interconnection structure of the invention has the advantages that the vertical transmission performance of radio frequency can be improved, and the transmission of DC-40GHz broadband high-frequency signals can be realized between ceramics; and the structure is a vertical interconnection structure, good vertical transmission of radio frequency signals can be realized within 40 GHz, and return loss S11 and S22 are superior to -10 dB.
Description
technical field [0001] The invention belongs to the technical field of chip packaging microwave signal interconnection, and more specifically relates to a vertical interconnection structure and packaging structure of ultra-high frequency surface-mounted ceramics. Background technique [0002] With the increasing demand for miniaturization and integration of electronic equipment, this requires the use of high-performance and high-reliability radio frequency vertical interconnection structures. For the realization of the vertical interconnection structure of chip-level packaging, the ceramic materials currently used in hybrid integrated circuits mainly include aluminum nitride HTCC, alumina HTCC and LTCC ceramic substrates, all of which are co-fired ceramics. Due to the high sintering temperature of the HTCC substrate, the conductor materials used for internal wiring and through-hole filling are metal materials such as tungsten, molybdenum, and manganese with high melting poin...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L23/31H01L23/29H01L23/498
CPCH01L23/3114H01L23/3121H01L23/49811H01L23/49838H01L23/291
Inventor 朱春雨李萌白银超赵瑞华王磊赵正桥王晟苏晓晨韩猛刘星高占岭杨添延
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP