Quick drainage device after silicon leakage of single crystal furnace

A single crystal furnace, a fast technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as explosion, slowness, and gas can not escape.

Pending Publication Date: 2021-04-09
四川晶科能源有限公司
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  • Abstract
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Problems solved by technology

[0002] In the Czochralski single crystal, there will be abnormal accidents such as silicon leakage. The slow silicon leakage can be found and dealt with in time, and the loss is not large; the serious silicon leakage, due to the sudden flow of silicon liquid into the furnace, Contact with the bottom of the stainl

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  • Quick drainage device after silicon leakage of single crystal furnace

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Embodiment Construction

[0018] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0019] Please refer to figure 1 , figure 1 It is a schematic diagram of the overall structure of a specific embodiment provided by the present invention.

[0020] In a specific embodiment provided by the present invention, it mainly includes a vertical passage 1, an overflow tank 2 and an upper cover 3, the top of the vertical passage 1 communicates with the bottom of the single crystal furnace, and the bottom of the vertical passage 1 It communicates with t...

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Abstract

The rapid drainage device comprises a vertical channel, an overflow groove and an upper cover, the top end of the vertical channel is communicated with the bottom of the single crystal furnace, the bottom end of the vertical channel is communicated with the overflow groove, the upper cover is installed on the upper end face of the overflow groove, and a vacuum cavity is formed in the overflow groove. According to the rapid drainage device after silicon leakage of the single crystal furnace, the overflow groove is formed in the periphery of the bottom of the single crystal furnace, wherein the exhaust pipeline is connected with the vertical channel, the overflow groove is connected below the vertical channel, the overflow groove is connected with the whole furnace body, and when the silicon leakage phenomenon occurs, the vertical channel drains a silicon solution into the overflow groove, so that molten silicon rapidly flows into the overflow groove and does not make contact with stainless steel filled with cooling water; therefore, it is guaranteed that molten silicon does not melt through the stainless steel furnace bottom, boiler explosion caused by rapid increase of internal pressure of a boiler due to instantaneous vaporization of cooling water leakage is avoided, and the overflow groove can be opened from the upper cover to take out solidified silicon solution in the overflow groove for further installation and use.

Description

technical field [0001] The invention relates to the technical field of photovoltaic manufacturing, in particular to a device for quickly drainage after silicon leakage in a single crystal furnace. Background technique [0002] In the Czochralski single crystal, there will be abnormal accidents such as silicon leakage. The slow silicon leakage can be detected and dealt with in time, and the loss is not large; the serious silicon leakage, due to the sudden flow of silicon liquid into the furnace, Contact with the bottom of the stainless steel boiler with cold water will seriously melt through the bottom of the stainless steel furnace with cooling water, resulting in instantaneous gasification of the cooling water. Due to the closed space in the furnace, the gas generated cannot leak out, which may cause an explosion and cause a huge accident. [0003] Therefore, how to avoid the silicon solution melting through the bottom of the boiler caused by silicon leakage is a technical ...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 马腾飞汪奇龙昭钦宋丽平
Owner 四川晶科能源有限公司
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