The rapid drainage device comprises a
vertical channel, an overflow groove and an upper cover, the top end of the
vertical channel is communicated with the bottom of the
single crystal furnace, the bottom end of the
vertical channel is communicated with the overflow groove, the upper cover is installed on the upper end face of the overflow groove, and a vacuum cavity is formed in the overflow groove. According to the rapid drainage device after
silicon leakage of the
single crystal furnace, the overflow groove is formed in the periphery of the bottom of the
single crystal furnace, wherein the exhaust pipeline is connected with the vertical channel, the overflow groove is connected below the vertical channel, the overflow groove is connected with the whole furnace body, and when the
silicon leakage phenomenon occurs, the vertical channel drains a
silicon solution into the overflow groove, so that
molten silicon rapidly flows into the overflow groove and does not make contact with stainless steel filled with cooling water; therefore, it is guaranteed that
molten silicon does not melt through the stainless steel furnace bottom,
boiler explosion caused by rapid increase of
internal pressure of a boiler due to instantaneous
vaporization of cooling
water leakage is avoided, and the overflow groove can be opened from the upper cover to take out solidified silicon solution in the overflow groove for further installation and use.