Method of creating wafer shape data

A data-based, wafer-based technology, applied to measuring devices, instruments, electrical components, etc., can solve problems such as the inability to visualize the shape of wafers, and achieve the effect of reducing capacity
CN112640072APending Publication Date: 2021-04-09SHIN-ETSU HANDOTAI CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHIN-ETSU HANDOTAI CO LTD
Publication Date
2021-04-09

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Abstract

A wafer is prepared (S1), and, with respect to the prepared wafer, a thickness shape at each radial position is measured (S2, S3) from the wafer center for each of angles obtained by dividing the 360 degrees of the circumference into a predetermined number. The thickness shape for each angle obtained from a measuring apparatus is approximated by a polynomial of at least the sixth degree, and a function is created expressing the wafer thickness with respect to the radial position (S4). A thickness shape output from the measuring apparatus is compared with a thickness shape output by means of the function to confirm that an error is within a predetermined error throughout the surface of the wafer (S5). After this confirmation, functional information for each angle is supplied to a user in the form of data attached to a wafer indicating the wafer shape (S6). In this way, a method is provided with which it is possible to reduce the volume of wafer shape data, obtain high-accuracy shape data, and is suitable for learning the shape of the entire surface of a wafer.
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Description

technical field

[0001] The invention relates to a method for converting the shape of a wafer into data through a function. Background technique

[0002] When wafers such as silicon wafers are shipped to users, SFQR (Site Frontside ref.least sQuare Range), SBIR (Site Backside ref.IdealRange), ESFQR (Edge Site Frontside ref.least sQuare Range) and other flatness parameters. Although these parameters are sufficient to be used as a certain standard for classifying the flatness of wafers, they are substitute parameters that cannot visualize the shape of a wafer. Therefore, it is necessary to pre-measure the shape of the wafer on the platform in the pre-processing before burning the device pattern to the wafer in the stepping procedure.

[0003] Here, there are the following Patent Documents 1 to 3 regarding the measurement of the wafer shape. Patent Document 1 describes a method of measuring the cross-sectional shape of a workpiece such as a silicon wafer. Specifically, Paten...

Claims

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