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Method of creating wafer shape data

A data-based, wafer-based technology, applied to measuring devices, instruments, electrical components, etc., can solve problems such as the inability to visualize the shape of wafers, and achieve the effect of reducing capacity

Pending Publication Date: 2021-04-09
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although these parameters are sufficient as a standard for classifying the flatness of wafers, they are substitute parameters that cannot visualize the shape of wafers.

Method used

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  • Method of creating wafer shape data
  • Method of creating wafer shape data
  • Method of creating wafer shape data

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Investigate the relationship between polynomial degrees and correlation coefficients. Specifically, three silicon wafers (hereinafter referred to as wafers) having a diameter of 300 mm were prepared, and the thickness profile of each wafer was measured with a flatness measuring machine (Wafer Sight 2) manufactured by KLA-Tencor. In addition, Wafer Sight 2 is a measuring machine based on the principle that light is incident on the wafer, and the wafer is measured by the number and pitch of interference fringes generated by the optical interference of the reflected light from the wafer and the reflected light from the reference plane. The displacement of the surface.

[0048] Using the offline analysis software (OASys) manufactured by KLA-Tencor, the file (wnt file) of the measurement result output from Wafer Sight 2 was converted into a thickness measurement value in polar coordinates with the wafer center as the origin, and the converted Measured shape data is output a...

Embodiment 2

[0054] Prepare 15 silicon wafers (hereinafter referred to as wafers) with a diameter of 300mm, and each wafer according to figure 1 The step of functionization is performed, and the thickness map obtained from the obtained function is compared with the thickness map output from the measuring machine. Specifically, the thickness profile of each wafer was measured with a flatness measuring machine (Wafer Sight 2) manufactured by KLA-Tencor.

[0055] Using offline analysis software (OASys) manufactured by KLA-Tencor, the measurement result file (wnt file) output from Wafer Sight 2 is converted into a thickness measurement value in polar coordinates with the wafer center as the origin, and the converted measurement The shape data is output as a csv file. In the output measurement state data, the scale pitch in the θ direction (division angle θ1) is set to 1 degree, and the scale pitch in the r direction is set to 0.2 mm.

[0056] For each piece of measured shape data, approximat...

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Abstract

A wafer is prepared (S1), and, with respect to the prepared wafer, a thickness shape at each radial position is measured (S2, S3) from the wafer center for each of angles obtained by dividing the 360 degrees of the circumference into a predetermined number. The thickness shape for each angle obtained from a measuring apparatus is approximated by a polynomial of at least the sixth degree, and a function is created expressing the wafer thickness with respect to the radial position (S4). A thickness shape output from the measuring apparatus is compared with a thickness shape output by means of the function to confirm that an error is within a predetermined error throughout the surface of the wafer (S5). After this confirmation, functional information for each angle is supplied to a user in the form of data attached to a wafer indicating the wafer shape (S6). In this way, a method is provided with which it is possible to reduce the volume of wafer shape data, obtain high-accuracy shape data, and is suitable for learning the shape of the entire surface of a wafer.

Description

technical field [0001] The invention relates to a method for converting the shape of a wafer into data through a function. Background technique [0002] When wafers such as silicon wafers are shipped to users, SFQR (Site Frontside ref.least sQuare Range), SBIR (Site Backside ref.IdealRange), ESFQR (Edge Site Frontside ref.least sQuare Range) and other flatness parameters. Although these parameters are sufficient to be used as a certain standard for classifying the flatness of wafers, they are substitute parameters that cannot visualize the shape of a wafer. Therefore, it is necessary to pre-measure the shape of the wafer on the platform in the pre-processing before burning the device pattern to the wafer in the stepping procedure. [0003] Here, there are the following Patent Documents 1 to 3 regarding the measurement of the wafer shape. Patent Document 1 describes a method of measuring the cross-sectional shape of a workpiece such as a silicon wafer. Specifically, Paten...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L21/304
CPCG01B21/20G01B21/30G01B11/2441G01B11/306H01L22/12H01L22/20G01B11/06G06F17/17G06F17/18
Inventor 大西理
Owner SHIN-ETSU HANDOTAI CO LTD
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