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Gasket and manufacturing method thereof, and packaging structure and manufacturing method thereof

A gasket and resistance structure technology, applied in the field of semiconductor devices, can solve problems such as difficulties, occupying a large space, limiting the space of passive components, etc., and achieve good electrical performance, save space, and reduce the effect of devices

Active Publication Date: 2021-04-13
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the package structure includes multiple bare cores, multiple passive components such as resistors and capacitors need to be placed, and these passive components need to occupy a large space
However, the internal space of the packaging structure is limited, which limits the space available for passive components.
[0005] It is very difficult to arrange more passive components, and it is even impossible to realize such a packaging structure
In addition, general-purpose passive components have a plastic package and pin structure, which is a redundant structure that takes up space for the package structure

Method used

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  • Gasket and manufacturing method thereof, and packaging structure and manufacturing method thereof
  • Gasket and manufacturing method thereof, and packaging structure and manufacturing method thereof
  • Gasket and manufacturing method thereof, and packaging structure and manufacturing method thereof

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Embodiment Construction

[0071] For a better understanding of the application, various aspects of the application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are descriptions of exemplary embodiments of the application only, and are not intended to limit the scope of the application in any way. Throughout the specification, the same reference numerals refer to the same elements. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0072] It should be noted that in this specification, expressions of first, second, third, etc. are only used to distinguish one feature from another, and do not represent any limitation on the features. Accordingly, a first electrode discussed hereinafter may also be referred to as a second electrode without departing from the teachings of the present application. vice versa.

[0073] In the drawings, the thickness, size and sha...

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Abstract

The invention provides a gasket, a manufacturing method thereof, a packaging structure and a manufacturing method thereof. The gasket comprises a bottom plate, at least one passive element structure andat least two electrodes, wherein the at least one passive element structure is formed on the first surface of the bottom plate and comprises a circuit pattern formed through a planar process, and the circuit pattern comprises at least two functional ends used for being electrically connected with an external circuit; and the at least two electrodes are formed at the functional end of the passive element structure and are used for electrically connecting the functional end with an external circuit.

Description

technical field [0001] The present application relates to the field of semiconductor devices, and more specifically, to a gasket, a method for manufacturing a gasket, a packaging structure, and a method for manufacturing a packaging structure. Background technique [0002] With the continuous development of the microelectronics industry, the integration of semiconductor devices is getting higher and higher. Semiconductor memory has also developed from two-dimensional to three-dimensional, such as three-dimensional NAND flash memory (3D NAND flash). And flash memory is also constantly upgraded. [0003] At present, when designing a system-level package structure of a memory, in order to improve the signal integrity and power integrity of the memory, some passive components are usually arranged on the bottom plate in the package structure. For example, high-precision (eg, 1%) resistors are set on the base plate to calibrate the drive impedance and termination resistance, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/06H01L27/08H01L21/822H01L27/11524H01L27/11551H01L27/1157H01L27/11578H10B41/20H10B41/35H10B43/20H10B43/35
CPCH01L27/06H01L27/0802H01L27/0805H01L21/822H10B41/20H10B41/35H10B43/20H10B43/35
Inventor 曾心如陈鹏王利琴周厚德侯春源
Owner YANGTZE MEMORY TECH CO LTD
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