Light-emitting diode and manufacturing method thereof

Abstract

The invention relates to the field of light-emitting diodes, and particularly discloses a light-emitting diode and a manufacturing method thereof. The method comprises the steps: providing a substrate; carrying out high-temperature treatment on the substrate at a first growth temperature; not cooling the substrate, and growing a buffer layer on the substrate at the first growth temperature; growing a first semiconductor layer on one side, far away from the substrate, of the buffer layer at a second growth temperature; growing an active light-emitting layer on one side, far away from the buffer layer, of the first semiconductor layer at a third growth temperature; growing an electron blocking layer on one side, far away from the first semiconductor layer, of the active light-emitting layer; and growing a second semiconductor layer on one side, away from the active light-emitting layer, of the electron blocking layer. Through the mode, the manufacturing period of the light-emitting diode is shortened, the production cost is reduced, and the production efficiency is improved.

Description

technical field [0001] The present application relates to the field of light-emitting diodes, in particular to a light-emitting diode and a manufacturing method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a semiconductor element that can convert electric current into light in a specific wavelength range. Among them, one of the problems faced by GaN-based light-emitting diodes in the manufacturing process is that the substrate needs to be cleaned and purified in a high temperature and hydrogen atmosphere, and then a buffer layer is deposited on the substrate, which can solve the problem of substrate materials. Mismatch issues with gallium nitride materials. [0003] In the long-term research and development process, the inventors of the present application found that the cleaning and purification process of the substrate needs to be raised to a high temperature for a long time, and then cooled down to the working temperature o...

AI Technical Summary

Problems solved by technology

Among them, one of the problems faced by GaN-based light-emitting diodes in the manufacturing process is that the substrate needs to be cleaned and purified in a high temperature and hydrogen atmosphere, and then a buffer layer is deposited on the substrate, which can solve the problem of substrate materials. Mismatch issues with GaN materials

[0003] In the long-term research and development process, the inventors of the present application found that the cleaning and purification process of the substrate needs to be raised to a high temperature for a long time, and then cooled down to the working temperature of the deposited buffer layer after the high temperature has stabilized for a period of time, resulting in the manufacturing of light-emitting diodes. longer period

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