Method and equipment for overcoming temperature reaction lag of silicon carbide annular carrier

Abstract

The embodiment of the invention provides a method and equipment for overcoming temperature reaction lag of a silicon carbide annular carrier. The method comprises the following steps of: taking temperature as a main loop and pressure as an auxiliary loop, heating a silicon carbide annular carrier in a sugar-coating pot within a preset duration until the temperature for spraying active feed liquid is reached; and correcting the temperature of the silicon carbide annular carrier in the sugar-coating pot, and limiting the temperature of the silicon carbide annular carrier in the sugar-coating pot during spraying of the active feed liquid and the constant-temperature temperature of the silicon carbide annular carrier in the sugar-coating pot after spraying of the active feed liquid within a preset error range. According to the method and the equipment for overcoming the temperature reaction lag of the silicon carbide annular carrier provided by the embodiment of the invention, the control lag phenomenon of the temperature of the silicon carbide annular carrier in the sugar-coating pot can be effectively avoided.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of industrial control, in particular to a method and equipment for overcoming the temperature reaction hysteresis of a silicon carbide ring carrier. Background technique [0002] Currently, the mainstream BC-118 catalyst is a new generation catalyst for the production of maleic anhydride (referred to as maleic anhydride) by the oxidation of benzene. The catalyst has the advantages of high activity, good selectivity, high yield, large load, and good quality of maleic anhydride produced. In the production process of maleic anhydride, it is found that when the temperature is raised and sprayed, the existing control method cannot be used to control the temperature. This is mainly because the catalyst is attached to the silicon carbide annular carrier of Ф6×1.5×5mm, and the silicon carbide annular carrier is stirred and heated in the sugar coating pan, which is heated by natural gas com...

AI Technical Summary

Problems solved by technology

Since the control temperature accuracy of the silicon carbide annular carrier in the sugar-coating pan heated by natural gas is relatively high, but there is a relatively large lag from the action of the control regulating valve to the change of the carrier temperature. Trying to use traditional control methods cannot meet the control requirements.

Therefore, finding a method that can overcome the temperature reaction hysteresis of the silicon carbide cyclic carrier and effectively avoid the control hysteresis of the temperature of the silicon carbide cyclic carrier in the sugar coating pan has become a technical problem that needs to be solved urgently in the industry.

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