Semiconductor device cleavage device and cleavage method
A semiconductor and cleavage technology, which is applied in the field of semiconductor device cleavage devices, can solve problems such as difficult operation and high cost, and achieve the effect of reducing difficulty and improving cleavage efficiency
Active Publication Date: 2021-06-18
度亘核芯光电技术(苏州)有限公司
View PDF9 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] The object of the present invention is to provide a semiconductor device cleavage device and a cleavage method, so as to alleviate the technical problems that the existing semiconductor device cleavage method is not easy to operate and has high cost
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0038] The technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0039] Such as figure 1 with figure 2 As shown, a kind of semiconductor device cleaving device provided by the present invention comprises:
[0040] A cleavage device body 800 having a cleavage area 150 for cleavage of the semiconductor device 700;
[0041] The spraying device 200 is used to form the protective liquid into a mist and spray it to the cleavage area 150, so that the cavity surface of the cleaved bar is covered by the protective liquid and forms a protective film;
[0042] The high-voltage electric field...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a semiconductor device cleavage device and a cleavage method, which relate to the technical field of semiconductor devices. The semiconductor device cleavage device includes a cleavage device body, and the cleavage device body has a cleavage device for semiconductor device cleavage area; a spraying device, used to make the protective liquid form a mist and spray it to the cleavage area, so that the cavity surface of the cleaved bar is covered by the protective liquid and form a protective film; a high-voltage electric field device, used to make the spraying device spray The protective solution ionizes and forms a charged spray. The semiconductor device cleavage device provided by the present invention can be used under normal pressure and does not require ultra-vacuum; Active unsaturated dangling bonds on the cavity surface (unsaturated dangling bonds are easy to combine with ions). On the other hand, the atomized protective solution can form a protective film on the cavity surface to protect the cavity surface from oxidation or contamination.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a semiconductor device cleavage device and a cleavage method. Background technique [0002] After the semiconductor chip is cleaved, it forms a bar. The bar has a freshly cleaved cavity surface, but the freshly cleaved cavity surface is relatively active, and it is extremely easy to absorb water, oxygen and other impurities in the air. [0003] In order to prevent the cavity surface from being exposed to the air, it is easy to absorb oxygen, oxidize or absorb gas and particle dirt. The current method is to cleavage the cavity surface in an ultra-high vacuum environment, and then passivate a layer of protective film to protect the cavity surface. However, this method has strict requirements on environmental conditions, requires an ultra-high vacuum environment, is expensive, and is not easy to operate in large quantities. Contents of the invention [0004] The obj...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01S5/02H01S5/028
Inventor 刘中华杨国文李颖赵卫东
Owner 度亘核芯光电技术(苏州)有限公司