Czochralski method monocrystalline silicon clamping mechanism capable of being lifted and working method

Abstract

The invention discloses a czochralski method monocrystalline silicon clamping mechanism capable of being lifted and pulled and a working method. The czochralski method monocrystalline silicon clamping mechanism mainly comprises an electric push rod, a monocrystalline silicon rod, an electric sliding block, a clamping ring mechanism, an electric guide rail and a convex shaft. A sleeve is arranged at the upper part of the furnace shell, the convex shaft is arranged at the upper part of the electric guide rail, and the electric push rod is in threaded connection with the convex shaft; a double-layer groove is formed in one side of the electric sliding block; the clamping ring mechanism is divided into a clamping base and a clamping ring, and a rotary block on the side portion of the clamping base is matched with the double-layer groove in an embedded mode; the clamping rings are provided with rolling wheels, and the two clamping rings are in butt joint with the grooves in a matched mode through the inserting columns. When the device is used, a silicon rod needs to be pulled to form a waist, the electric push rod pushes the convex shaft to drive the electric guide rail to move from two sides to the center, so that the clamping ring mechanism clamps the waist to prevent the silicon rod from shaking, and meanwhile, the lifting wire is assisted to lift, the load is reduced, and the thin neck fracture caused by overlarge weight of the silicon rod is prevented; potential safety hazards are reduced; and the quality of monocrystalline silicon is improved.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon production and preparation, in particular to a pulling and clamping mechanism for the production of Czochralski monocrystalline silicon rods. Background technique [0002] Monocrystalline silicon is the main source of semiconductor electronic materials and solar cell materials. At present, monocrystalline silicon is developing in the direction of large size, high efficiency and low cost. [0003] The Czochralski method (CZ) is the most commonly used method for producing single crystal silicon. In the single crystal furnace, the raw material is melted in the crucible, and under a reasonable temperature field, the single crystal seed crystal mounted on the seed crystal rod is brought into contact with the melt. Poor cooling is formed, so the melt starts to solidify on the surface of the seed crystal and grows into a single crystal with the same crystal structure as the seed crystal...

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Problems solved by technology

[0004] At present, flexible shaft single crystal furnaces are widely used at home and abroad for the preparation of Czochralski monocrystalline silicon. With the continuous increase of the diameter and length of Czochralski monocrystalline silicon, the length of the pulling line and the weight of the crystal are also increasing, resulting in single crystal The risk of silicon rod shaking increases, and at the same time, the load of the pulling wire increases and the occurrence of splashes can easily cause the strength of the pulling wire to decrease, and the single crystal silicon rod that is too heavy may also cause fine neck fracture

[0005] The crucible rotation, the seed crystal lifting and rotating mechanism are not running smoothly, the vibration generated during the unstable flow of cooling water, and the shaking of the single crystal silicon rod caused by external factors of the single crystal furnace will cause serious safety problems and are not conducive to Improving the quality of monocrystalline silicon materials

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