A Czochralski monocrystalline silicon clamping mechanism and working method that can be pulled

Abstract

The invention discloses a Czochralski monocrystalline silicon clamping mechanism and working method that can be pulled, mainly including an electric push rod, a single crystal silicon rod, an electric slider, a clamping ring mechanism, an electric guide rail, and a protruding shaft; The upper part of the shell is provided with a sleeve, the protruding shaft is arranged on the upper part of the electric guide rail, and the electric push rod is connected with the protruding shaft through threads; there is a double-layer groove on one side of the electric slider; the clamping The ring mechanism is divided into a clamping base and a clamping ring. The rotary block on the side of the clamping base is embedded in the double-layer groove; the clamping ring is provided with rollers, and the two clamping rings are connected to the Grooved for butt fit. When using this device, the silicon rod needs to be pulled out of the waist, and the electric push rod pushes the protruding shaft, driving the electric guide rail to move from both sides to the center, so that the clamping ring mechanism can clamp the waist to prevent the silicon rod from shaking, and at the same time assist the lifting wire to lift the waist. Pull, reduce the load, and prevent the thin neck from breaking due to the excessive weight of the monocrystalline silicon rod, which is conducive to reducing safety hazards and improving the quality of monocrystalline silicon.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon production and preparation, in particular to a pulling and clamping mechanism for the production of Czochralski monocrystalline silicon rods. Background technique [0002] Monocrystalline silicon is the main source of semiconductor electronic materials and solar cell materials. At present, monocrystalline silicon is developing in the direction of large size, high efficiency and low cost. [0003] The Czochralski method (CZ) is the most commonly used method for producing single crystal silicon. In the single crystal furnace, the raw material is melted in the crucible, and under a reasonable temperature field, the single crystal seed crystal mounted on the seed crystal rod is brought into contact with the melt. Poor cooling is formed, so the melt starts to solidify on the surface of the seed crystal and grows into a single crystal with the same crystal structure as the seed crystal...

AI Technical Summary

Problems solved by technology

[0004] At present, flexible shaft single crystal furnaces are widely used at home and abroad for the preparation of Czochralski monocrystalline silicon. With the continuous increase of the diameter and length of Czochralski monocrystalline silicon, the length of the pulling line and the weight of the crystal are also increasing, resulting in single crystal The risk of silicon rod shaking increases, and at the same time, the load of the pulling wire increases and the occurrence of splashes can easily cause the strength of the pulling wire to decrease, and the single crystal silicon rod that is too heavy may also cause fine neck fracture

[0005] The crucible rotation, the seed crystal lifting and rotating mechanism are not running smoothly, the vibration generated during the unstable flow of cooling water, and the shaking of the single crystal silicon rod caused by external factors of the single crystal furnace will cause serious safety problems and are not conducive to Improving the quality of monocrystalline silicon materials

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