Photoresist compatibility detection device

Abstract

The invention discloses a photoresist compatibility detection device, which is used for detecting the consistency of the hardness of photoresist at different depths by adopting a probe; the device comprises a driving power supply used for generating a compensation current, a piezoelectric driver connected with the driving power supply and used for applying an acting force based on the compensation current so as to enable the probe to enter the photoresist, a laser unit used for detecting the depth of the probe entering the photoresist, and a data processing device connected with the driving power supply so as to obtain the compensation current, connected with the laser unit so as to obtain the depth, and calculating the compatibility of the photoresist according to the relationship between the compensation current and the depth; the photoresist compatibility detection device disclosed by the invention can be used for directly detecting and representing the compatibility of the lower part and the upper part of the photoresist, and is beneficial to improving the photoresist compatibility in an actual scene or a subsequent process, so that the product yield is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a photoresist compatibility detection device. Background technique [0002] In recent years, the development of flash memory (FlashMemory) memory is particularly rapid. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. It has been widely used. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device is higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, three-dimensional memory devices) have been developed. A three-dimensional memory device includes a plurality of memory cells stacked along the vertical direction, which can double the integration level on a wafer per ...

AI Technical Summary

Problems solved by technology

The photoresist will be consumed vertically and laterally during the etching process. When there are many layers of the step structure, a thicker photoresist layer needs to be formed. At this time, the photoresist layer is close to the lower part of the stacked structure and far away from the stacked There is a certain difference in the hardness of the upper part, which leads to unsatisfactory etching effect and cannot guarantee the yield of later devices

[0004] However, the existing technology can only indirectly reflect the compatibility of the lower and upper parts of the photoresist layer through AEI (After Etch Inspection, detection after etching) technologies such as LER (Line Edge Roughness, line edge roughness), so it is expected that a method that can directly A technical solution for detecting and characterizing the compatibility of photoresist lower and upper parts

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