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Machining method of aluminum target material

A processing method and aluminum target technology, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as cracking, target deformation, back plate falling off, etc.

Active Publication Date: 2021-05-11
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In such a harsh environment, if the bonding between the target and the back plate in the target assembly is poor, it will cause the target to deform, crack, or even fall off the bonded back plate under heat, making sputtering impossible. Work properly

Method used

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  • Machining method of aluminum target material

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This embodiment provides a processing method for an aluminum target, the processing method comprising:

[0035] Process the O-Ring groove on the welded aluminum target and the aluminum back plate, and perform sandblasting on the sandblasting area;

[0036] Wherein, the depth of the O-Ring groove is 4.09mm, the width is 4.867mm, the outer angle is 63°, the inner angle is 6°, the outer upper radius is 0.173mm, the inner upper radius is 0.073mm, and the lower radius is 0.792mm, The depth of the step on one side is 0.250mm;

[0037] The raw material for the sandblasting treatment includes white corundum, the distance between the sandblasting gun and the sandblasting area is 80mm, the air pressure is 5.5kg, and the time is 2min. Scanning makes the roughness distribution uniform.

Embodiment 2

[0039] This embodiment provides a processing method for an aluminum target, the processing method comprising:

[0040] Process the O-Ring groove on the welded aluminum target and the aluminum back plate, and perform sandblasting on the sandblasting area;

[0041] Wherein, the depth of the O-Ring groove is 4.15mm, the width is 4.969mm, the outer angle is 65°, the inner angle is 68°, the outer upper radius is 0.427mm, the inner upper radius is 0.327mm, and the lower radius is 0.919mm , the step depth on one side is 0.270mm;

[0042] The raw material for the sandblasting treatment includes white corundum, the distance between the sandblasting gun and the sandblasting area is 100mm, the air pressure is 6kg, and the time is 4min. Make the roughness distribution even.

Embodiment 3

[0044] This embodiment provides a processing method for an aluminum target, the processing method comprising:

[0045] Process the O-Ring groove on the welded aluminum target and the aluminum back plate, and perform sandblasting on the sandblasting area;

[0046]Wherein, the depth of the O-Ring groove is 4.12mm, the width is 4.950mm, the outer angle is 64°, the inner angle is 67°, the upper outer radius is 0.300mm, the upper inner radius is 0.200mm, and the lower radius is 0.850mm , the step depth on one side is 0.260mm;

[0047] The raw material for the sandblasting treatment includes white corundum, the distance between the sandblasting gun and the sandblasting area is 90mm, the air pressure is 5.8kg, and the time is 3min. Scanning makes the roughness distribution uniform.

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Abstract

The invention provides a machining method of an aluminum target material. The machining method comprises the steps: machining an O-Ring groove in a welded aluminum target and an aluminum back plate, and conducting sand blasting treatment on a sand blasting area. By means of the machining method, the problems of vacuum air leakage and sand blasting Arcing of the aluminum target O-Ring groove can be solved.

Description

technical field [0001] The invention belongs to the field of target material processing, and relates to a processing method of an aluminum target material. Background technique [0002] In the field of large-scale optical coating, target components are often used to perform plasma vapor deposition (Plasma Vapor Deposition, PVD) coating on the surface of the substrate to form a barrier layer. The target assembly is composed of a target meeting the sputtering performance and a back plate combined with the target and having a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base station, and has the effect of conducting heat. [0003] In the sputtering process, the working environment of the target assembly is generally harsh. For example, the working temperature of the target assembly is high, which can reach 300 ° C ~ 500 ° C; in addition, one side of the target assembly is filled with cooling water, and the ...

Claims

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Application Information

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IPC IPC(8): B24C1/00C23C14/34
CPCB24C1/00C23C14/3407
Inventor 姚力军边逸军潘杰王学泽章丽娜
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD