Quality prediction method, preparation method and system of high-resistance gallium oxide based on deep learning and Czochralski method

Abstract

The invention discloses a deep learning and pulling method-based high-resistance gallium oxide quality prediction method, preparation method and system, and the method comprises the steps: obtaining the preparation data of a high-resistance gallium oxide single crystal prepared by a pulling method, the preparation data comprising seed crystal data, environment data and control data, the environment data comprises a doping element type and a doping element concentration; the preparation data is preprocessed to obtain preprocessed preparation data; the preprocessing preparation data are input into a trained neural network model, predicted quality data corresponding to the high-resistance gallium oxide single crystal are obtained through the trained neural network model, and the predicted quality data comprise predicted resistivity. According to the method, the quality of the high-resistance gallium oxide single crystal can be predicted through the trained neural network model, so that the preparation data can be adjusted to obtain the high-resistance gallium oxide single crystal with the preset resistivity, and the performance of the high-resistance gallium oxide single crystal is optimized.

Description

technical field [0001] The invention relates to the field of gallium oxide single crystal preparation, in particular to a quality prediction method, preparation method and system of high-resistance gallium oxide based on deep learning and pulling method. Background technique [0002] β-Ga 2 o 3 (Gallium oxide) is a semiconductor material with a direct bandgap and a wide bandgap, and the bandgap width is about 4.8-4.9eV. It has many advantages such as wide band gap, fast saturated electron drift, high thermal conductivity, high breakdown field strength, stable chemical properties, etc. It has broad application prospects in the field of high temperature, high frequency, and high power power electronic devices. In addition, it can also be used for LED chips, solar-blind ultraviolet detection, various sensor components and imaging components, etc. [0003] The pulling method is one of the methods for preparing high-resistance gallium oxide. In the prior art, when the high-res...

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a quality prediction method, preparation method and system of high-resistance gallium oxide based on deep learning and pulling method, aiming at solving the problem of existing pulling method. The process of preparing high-resistance gallium oxide single crystals relies on the operator's experience to set parameters, which has poor repeatability and cannot stably produce high-resistance gallium oxide single crystals with a predetermined resistivity

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