Connection compensation device for preventing local low temperature of high-temperature furnace chamber prepared from single crystal material

A single crystal material and compensation device technology, which is applied in the directions of polycrystalline material growth, single crystal growth, single crystal growth, etc., can solve the problems of uneven radial temperature and axial temperature gradient of the furnace cavity, and reduce the temperature around the rapid heat transfer Influence and other issues, to achieve the effect of increasing the contact surface area and improving uniformity
CN112853493AActive Publication Date: 2021-05-28YUNNAN AGRICULTURAL UNIVERSITY
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
YUNNAN AGRICULTURAL UNIVERSITY
Publication Date
2021-05-28

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Abstract

The invention relates to a connection compensation device for preventing local low temperature of a high-temperature furnace chamber prepared from a single crystal material, and belongs to the technical field of crystal material preparation. In the present invention, a conductive heat-insulating bridge is used to connect with a conductor, due to that the wall thickness of the conductive heat-insulating bridge is greatly reduced and the contact surface area is greatly increased, and the wall surface is directly buried in the furnace chamber heat preservation and insulation layer, and based on a heat transfer principle, three temperature areas with gradually reduced temperature are respectively formed in areas near the conductive heat-insulating bridge I, the conductive heat-insulating bridge II and the conductive heat-insulating bridge III from the inner cavity of the furnace chamber heat preservation and insulation layer at high temperature to a connecting conductive sheet at room temperature; the temperature area of the conductive heat-insulating bridge I is subjected to heating compensation through a temperature heating compensator, so that the problem that low temperature is formed in a local area close to the high-temperature furnace chamber due to too fast heat conduction of a connecting conductive sheet is prevented, and the uniformity of radial temperature and axial temperature gradient in the furnace chamber is effectively improved; and the high-temperature furnace for preparing the single-crystal material can be used for preparing the high-quality single-crystal material.
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Description

Technical field

[0001] The present invention belongs to the technical field of crystal material preparation, and in particular, a connection compensation device for preventing a high temperature furnace cavity local low temperature preventing a single crystal material.

[0002] Increase temperature compensation; the thermocoupler of the 23 and 26 outer circle winding heat-sensitive material, the smaller the temperature, the lower the temperature, the greater the resistance value.Background technique

[0003] When the zinc-cadmium triplet or other two-component single crystal or single component is divided, the raw material having a higher purity is placed in the quartz bottle to pick up the vacuum, after high temperature melting, swing mixing and other processes. The single crystal material can be grown in a crystalline material growth furnace to grow. The growth furnace is usually composed of 7 sections to 11, and each furnace end cavity temperature controls a constant temperature value of 9...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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