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A texturing method for pretreating the surface of a single crystal silicon wafer by an electrochemical method

A single crystal silicon wafer, pretreatment technology, applied in chemical instruments and methods, after treatment, single crystal growth, etc., can solve the problems of large consumption of hydrogen peroxide, high requirements for transportation and storage, and increased cost of battery preparation. Achieve the effect of high transportation and storage costs, uniform distribution and simple structure

Active Publication Date: 2022-07-12
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, hydrogen peroxide is a dangerous corrosive drug, chemically unstable and easily decomposed, and can react with combustibles to release a large amount of heat and oxygen, causing fire and explosion
In the actual solar cell manufacturing process, the consumption of hydrogen peroxide used for texturing is relatively large. The concentration of hydrogen peroxide on the market is mostly 30%-35% high-concentration products, which are highly corrosive and have a high risk factor. If not leaked or handled improperly It will cause great harm to the environment, which also leads to high requirements for its transportation and storage, resulting in a significant increase in the cost of battery preparation, so it is very necessary to replace hydrogen peroxide

Method used

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  • A texturing method for pretreating the surface of a single crystal silicon wafer by an electrochemical method
  • A texturing method for pretreating the surface of a single crystal silicon wafer by an electrochemical method
  • A texturing method for pretreating the surface of a single crystal silicon wafer by an electrochemical method

Examples

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Embodiment 1

[0033] The texturing method for electrochemical pretreatment of the surface of a single crystal silicon wafer in this embodiment specifically includes the following steps:

[0034] (1) Immerse the solar monocrystalline silicon wafer in anhydrous ethanol, and ultrasonically clean it at 45-50°C for 5 minutes to remove impurities and organic pollution on the surface of the silicon wafer. Then, the silicon wafer was taken out, washed with deionized water and dried, and then immersed in a 10% NaOH aqueous solution at 85°C for 10 minutes to remove the damaged layer on the surface of the silicon wafer. Then, the silicon wafer was taken out and washed with deionized water. and drying.

[0035] (2) Electrochemical surface pretreatment is performed on the single crystal silicon wafer treated in the above step (1): the silicon wafer is immersed in K at room temperature of 0.5mol / L 2 SO 4 In the solution, a silicon wafer is used as the anode, and a graphite sheet with an area larger tha...

Embodiment 2

[0038] In this example, the silicon wafer is immersed in a 0.5mol / L NaOH aqueous solution at room temperature, and a DC constant voltage of 2.5V is applied between the anode silicon wafer and the cathode. The other steps are the same as those in Example 1 to obtain a single crystal silicon wafer with a pyramid texture , see figure 2 .

Embodiment 3

[0040] In this example, the silicon wafer is immersed in a 0.5mol / L hydrochloric acid solution at room temperature, and a DC constant voltage of 2.5V is applied between the anode silicon wafer and the cathode. Other steps are the same as in Example 1 to obtain a single crystal silicon wafer with a pyramid textured structure , see image 3 .

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Abstract

A texturing method for pretreating the surface of a single crystal silicon wafer by an electrochemical method. The single crystal silicon wafer after removing the damage layer is immersed in an electrolyte solution, the single crystal silicon wafer is used as an anode, and graphite or stainless steel is used as a cathode. A DC voltage is applied between the anode silicon wafer and the cathode. The anode silicon wafer is the voltage positive electrode, and the cathode of the counter electrode is the voltage negative electrode. The surface of the silicon wafer is electrochemically pretreated, and then the single crystal silicon wafer is placed in the texturing solution for preparation. fleece to get a pyramid-structured suede. The invention can shorten the growth time of the silicon wafer suede pyramid and make the size distribution of the pyramid more uniform, thereby obtaining uniform and fine high-quality suede. The invention adopts a low-voltage electrolysis method, has low process investment and low energy consumption, and meets the requirements of high efficiency and low cost of photovoltaic power generation at the present stage. The invention adopts the low-voltage electrolysis method, the reaction conditions are mild, the reaction can be carried out at normal temperature, the human body and the environment are not harmful, the structure is simple, the operation is convenient, and the control is easy.

Description

technical field [0001] The invention belongs to the technical field of solar cell surface treatment, in particular to a texturing method for pretreating the surface of a single crystal silicon wafer by an electrochemical method. Background technique [0002] The process of texturing the surface of solar cells to form an effective anti-reflection effect is called texturing, which is one of the important means to improve the efficiency of solar cells. At present, the etching method using an inexpensive alkaline solution system has been widely used in industry. The single crystal silicon wafer can form a pyramid-like textured structure on the surface through anisotropic corrosion in an alkaline solution, and the incident light passes through the surface of the silicon wafer. Multiple reflections increase the absorption of light by the solar cell, thereby reducing the reflectivity of the surface of the silicon wafer. However, the size of the pyramid structure obtained by this p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/00C30B33/10C30B29/06C25D11/32H01L31/18
CPCC30B33/005C30B33/10C30B29/06C25D11/32H01L31/1804Y02P70/50
Inventor 张宏李凤王世栋
Owner XI AN JIAOTONG UNIV
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