Photovoltaic inverter IGBT junction temperature online correction method and system considering aging
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WUHAN UNIV
- Publication Date
- 2021-06-04
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Abstract
Description
technical field
[0001] The invention belongs to the field of reliability of core components of power electronic equipment, and more specifically relates to an online correction method and system for the junction temperature of a photovoltaic inverter IGBT module taking into account the aging process. Background technique
[0002] The photovoltaic power generation industry is one of the fastest-growing emerging industries. As a connection device between distributed power sources and distribution networks, photovoltaic inverters play a key role in the transformation and transmission of electric energy. At present, the most commonly used photovoltaic inverter is a three-phase voltage bridge inverter, whose output phase voltage contains two levels, so it is called a three-phase two-level inverter; insulated gate bipolar transistor ( Insulated Gate Bipolar Transistor (IGBT) is widely used in photovoltaic inverters due to its advantages of fast switching speed, relatively simple d...