Substrate processing device and substrate processing method
A substrate processing device and substrate technology, applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve the problems of long time, no atomic layer film formation, low deposition film speed, etc.
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no. 1 approach
[0082] Such as Figure 8 and 9 As shown, in the first embodiment, in all of the first region 10 , the first subregion 302 , the second region 20 , and the second subregion 304 , a treatment process may be performed on the substrate without using plasma. In the first embodiment, a high temperature process may be realized by performing heat treatment in the second region 20 . In this case, the heat treatment and the injection of the reactive gas may be alternately performed in the second region 20 . Therefore, in the first embodiment, the step coverage of high dielectric materials and the like can be improved. In addition, the first embodiment can be implemented to alternately perform heat treatment and ALD process, whereby the thickness of the film can be further increased compared to the case of depositing the film only by the ALD process.
no. 2 approach
[0084] Such as Figure 8 and 10 As shown, in the second embodiment, the treatment process may be performed on the substrate using plasma only in the second region 20 without using plasma in the first region 10 , the first subregion 302 , and the second subregion 304 . In this case, a treatment process using the excited reactive gas may be performed on the substrate in the second region 20 . The second embodiment can be realized suitable for low temperature processes. For example, the second embodiment may be implemented to be suitable for a semiconductor low-temperature nitridation process.
no. 3 approach
[0086] Such as Figure 8 , 9 , 11A and 11B, in the third embodiment, it is possible to perform processing on the substrate using plasma only in the first subregion 302 without utilizing plasma in the first region 10, the second region 20, and the second subregion 304. craft. The operation of the third embodiment is described below with respect to the first substrate S1.
[0087] First, if Figure 9 As shown, in a state where the first substrate S1 is located in the first region 10 , an adsorption process using a source gas may be performed on the first substrate S1 in the first region 10 . While performing the adsorption process, the substrate supporting unit 600 may remain in a stopped state. In addition, plasma may not be generated in the first partition 302 while the adsorption process is being performed.
[0088] Subsequently, when the adsorption process ends, the first substrate S1 may pass through the first partition 302 and may move from the first area 10 to the seco...
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