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Self-compensating gas-sensitive integrated field effect transistor structure

A field effect tube and effect tube technology, which is applied in the field of self-compensating gas sensor integrated field effect tube structure, can solve the problems of gas sensor characteristics, contact and adsorption, etc., to eliminate response interference, easy integration, and improve detection reliability sexual effect

Active Publication Date: 2021-06-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because there are a large number of different types of gases in the environment where the gas sensor is located, sensitive materials will inevitably contact and adsorb other interfering gas molecules, which will affect the gas-sensing characteristics

Method used

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  • Self-compensating gas-sensitive integrated field effect transistor structure
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  • Self-compensating gas-sensitive integrated field effect transistor structure

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Embodiment 1

[0028] A self-compensating gas-sensing integrated field effect tube structure provided by a preferred embodiment of the present invention, such as figure 1 As shown in (a), this embodiment is a P-type gas-sensing integrated field effect transistor, with a structure such as figure 2 , image 3 As shown in the structural diagram, in this embodiment, the drain electrode, the source electrode, and the output electrode are gold thin films, and the source and drain regions of the main sensitive unit field effect transistor and the compensation field effect transistor are boron-doped silicon thin layers. The channel of the main sensitive unit field effect tube and the compensation field effect tube is a silicon thin layer with a thickness of 10nm, and the total bias voltage of the drain of the main sensitive unit field effect tube is -2V. pole biased at V g , the interference gas adsorption is V r , that is, the bias voltage of the gas to be measured is V g -V r , and V g >2V ...

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Abstract

The invention discloses a gas-sensitive integrated field-effect tube structure, belongs to the technical field of gas sensors, and particularly relates to a self-compensating gas-sensitive integrated field-effect tube structure. The structure comprises a main sensing unit field-effect tube and a compensating unit field-effect tube. By adopting adouble-homotype field effect transistor common-pole structure, the adsorption sensitive function of field-effect tube sensitive grids of the main sensitive unit and the compensating unit is utilized to modulate the partial pressure of the double field-effect tubes so as to realize the selective self-compensation signal output of the gas sensitive field-effect tube structure to the main test gas. The self-compensating gas-sensitive integrated field-effect tube structure can eliminate the influence of specific interference gas on the sensitive characteristics of the gas-sensitive field-effect tube, improves the gas-sensitive selectivity of the gas-sensitive field-effect tube, improves the reliability of output signals of the gas-sensitive field-effect tube, and has wide application prospects in the fields of environmental monitoring, food safety, military affairs and the like.

Description

technical field [0001] The invention belongs to the technical field of gas sensors, and in particular relates to a self-compensating gas-sensing integrated field effect tube structure. Background technique [0002] In recent years, gas sensors have been widely used in environmental monitoring, food industry, military and other fields. Its main function is to convert information such as the concentration of specific target gases in the environment into recognizable electrical signals, and provide basic information for terminal functions such as back-end alarm, display, and information processing. [0003] In terms of sensor types, current electrical gas sensors mainly include semiconductor resistance type, electrochemical type and contact combustion type. Among them, the semiconductor resistive gas sensor realizes the gas sensitive response through the resistance change of the sensitive material caused by gas adsorption. Because most of them need to be heated, and the linear...

Claims

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Application Information

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IPC IPC(8): H01L27/085H01L29/43G01N27/12
CPCH01L27/085H01L29/43G01N27/12
Inventor 袁震太惠玲蒋亚东梁俊阁赵秋妮段晓辉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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