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Semiconductor device structure and manufacturing method thereof

A technology of device structure and manufacturing method, which is applied in the field of ultra-high voltage semiconductor device structure, and can solve problems such as characteristic degradation, affecting surface electric field distribution, and electrical parameter degradation

Pending Publication Date: 2021-06-11
NUVOTON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, under the high temperature reverse bias (HTRB) test, the electrical parameters of ultra-high voltage power components generally deteriorate.
Movable ions, impurity ions, and water vapor outside the ultra-high voltage power element will pass through the protective layer and enter the ultra-high voltage power element after obtaining enough energy, which will affect the surface electric field distribution and cause characteristic degradation

Method used

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  • Semiconductor device structure and manufacturing method thereof
  • Semiconductor device structure and manufacturing method thereof
  • Semiconductor device structure and manufacturing method thereof

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Embodiment Construction

[0031] Many different implementation methods or examples are disclosed below to implement different features of the embodiments of the present invention, and specific elements and embodiments of their arrangement are described below to illustrate the embodiments of the present invention. Of course, these embodiments are only for illustration, and should not limit the scope of the embodiments of the present invention. For example, it is mentioned in the description that the first feature is formed on the second feature, which includes the embodiment that the first feature is in direct contact with the second feature, and also includes other features between the first feature and the second feature. Embodiments of the features, that is, the first feature is not in direct contact with the second feature. In addition, repeated symbols or signs may be used in different embodiments, and these repetitions are only for simply and clearly describing the embodiments of the present inven...

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Abstract

The invention provides a manufacturing method of a semiconductor device structure. The manufacturing method comprises the following steps: providing a semiconductor substrate; forming a protection layer on the semiconductor substrate, wherein the protection layer comprises the following steps: forming an oxide layer on the semiconductor substrate; forming a first dielectric layer on the oxide layer; and forming a second dielectric layer on the first dielectric layer; and forming a source electrode, a gate electrode and a drain electrode on the protective layer.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device structure, and in particular to an ultra-high voltage semiconductor device structure. Background technique [0002] The green trend of global energy saving and carbon reduction has become an important topic for the follow-up research of electronic products. In the rapidly growing environmental protection and energy saving applications, LED lighting driver integrated circuits and AC-DC power management integrated circuits occupy an important role in back-end energy storage and power conversion. status. In the process of converting AC voltage into DC, power components capable of withstanding high voltage are required, so ultra-high voltage power components have been developed. [0003] However, under the high temperature reverse bias (HTRB) test, the ultra-high voltage power components generally suffer from electrical parameter degradation. Movable ions, impurity ions, and water vapo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/06H01L29/36H01L29/78
CPCH01L29/66477H01L29/78H01L29/36H01L29/0649
Inventor 李依珊潘钦寒
Owner NUVOTON