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A film growth method, device, equipment and system

A film and growth rate technology, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of long film growth time and unfavorable film growth efficiency, so as to reduce the growth time and improve the film layer. Growth efficiency, the effect of facilitating control

Active Publication Date: 2022-03-29
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing site settings lead to a longer film growth time, which is not conducive to improving the efficiency of film growth

Method used

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  • A film growth method, device, equipment and system
  • A film growth method, device, equipment and system
  • A film growth method, device, equipment and system

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Embodiment Construction

[0044] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0045] At present, when growing a film layer, ICE can be used to process and control the instructions of the film layer. For example, when using tungsten metal as a contact plug, the through hole in the dielectric layer can be pre-formed on the wafer, and the film layer growth process can be used in the through hole. Filling tungsten in the middle, ICE treatment ca...

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Abstract

The embodiment of the present application provides a film growth method, device, equipment and system, which can use the first station to form a seed crystal of the film-forming material on the wafer to be processed, and use the second station to form a seed crystal on the wafer to be processed. Form a low-temperature film of the material to be filmed on the processing wafer, use the third station to perform ICE treatment on the wafer to be processed with the low-temperature film formed, and use the fourth station to form a high-temperature film of the material to be filmed on the low-temperature film layer, which reduces the working time of the first station compared to the traditional technology using the first station to generate seed crystals and low-temperature film layers, compared to the traditional technology using the second station, third station and fourth station to form The high-temperature film layer reduces the number of working stations of the high-temperature film layer, which is beneficial to control and reduces the growth time, so the growth efficiency of the film layer can be improved.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular to a film growth method, device, equipment and system. Background technique [0002] In the manufacturing process of the conductor device, there is a need for film growth, such as depositing material on a plane to form a flat film layer, or depositing material on a device with a recess to fill the recess. For example, in the semiconductor device manufacturing process, tungsten metal is used as a contact plug. Specifically, the dielectric layer on the wafer can be etched first to form a through hole, and then the through hole is filled with tungsten. [0003] When growing the film layer, the quality of the film layer can be adjusted by using the inhibition controlled enhancement (ICE) process. The ICE machine usually has four stations (stations, STNs) to process the wafers in different ways. to obtain a high-quality film. However, the existing site setting results in longer ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/67
CPCH01L21/76879H01L21/76897H01L21/67011
Inventor 程磊熊少游谭力付家赫
Owner YANGTZE MEMORY TECH CO LTD