Array substrate

Abstract

An array substrate comprises a substrate, a first metal layer, an active layer, an interlayer insulating layer and a second metal layer. The first metal layer and the active layer are arranged on the substrate, the first metal layer at least forms a first wire, the interlayer insulating layer is arranged on one of the first metal layer and the active layer far away from the substrate, and the second metal layer is arranged on the interlayer insulating layer. The interlayer insulating layer is provided with a first contact hole, and the second metal layer is connected with the first wire through the first contact hole; wherein the first metal layer comprises a conductive layer and a first protective layer which are sequentially stacked in the direction away from the substrate. The molybdenum material of the first metal layer is replaced by the composite material of the conductive layer and the protective layer which are laminated, so that the conductivity of the first metal layer at high temperature and the function of inhibiting hillock generation are ensured, the protective layer can be prevented from being corroded by hydrofluoric acid in the subsequent process, and the stability of the low-temperature polycrystalline silicon process and the quality of the product are further improved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate. Background technique [0002] The first metal layer wires of LTPS TFT (Low Temperature Poly-Si Thin Film Transistor, low temperature polysilicon thin film transistor) products are limited by the subsequent high-temperature process. At present, most of the mass-produced products in the industry use molybdenum metal, but the impedance of molybdenum metal is relatively high. High-resolution, high-frequency, medium-to-large-size products have a high demand for low-resistance metals. At present, high-temperature-resistant metal materials can be found to replace molybdenum metals to make wires for the first metal layer, such as transfer wires, so that they can be used even at high temperatures. Keeping low resistance, but the first metal layer produced in this way is prone to hillock phenomenon at high temperature, which may cause adjacent wiring or wiring ...

AI Technical Summary

Problems solved by technology

[0004] Embodiments of the present invention provide an array substrate and a preparation method thereof, to solve the problem of covering the metal material with high temperature resistance and low resistance with titanium metal in the existing array substrate, so as to prevent the metal material from producing hillocks at high temperatures , but titanium metal is not resistant to the corrosion of hydrofluoric acid cleaning solution, which affects the technical problems of product quality

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