External-field-free spin-orbit torque induced torque switching device and preparation method thereof
A spin-orbit and device technology, which is applied in the fields of magnetic field-controlled resistors, the manufacture/processing of electromagnetic devices, and the selection of materials to achieve the effects of reducing current shunt effects, power consumption, and switching currents
Active Publication Date: 2021-06-15
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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However, the traditional SOT structure requires an additional external magnetic field to achieve magnetic switching under the action of the external magnetic field.
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[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0035] It should be understood, however, that these descriptions are exemplary only and are not intended to limit the scope of the present invention. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of known technologies are omitted to avoid unnecessarily confusing the concept of the present invention.
[0036] The terminology used herein is for the purpose of describing particular embodiments only, and is not intended to b...
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Abstract
The invention discloses an external-field-free spin-orbit torque induced torque switching device and a preparation method thereof. The device sequentially comprises a substrate, a functional layer, a spin-orbit torque layer, a magnetic tunnel junction and a protection layer from bottom to top, wherein the functional layer comprises a CoFe2O4 layer, and the CoFe2O4 layer provides an in-plane magnetic anisotropy field by using the inverse effect of magnetostriction; the spin-orbit torque layer is used for switching the magnetization direction of a free layer in the magnetic tunnel junction under the action of the magnetic anisotropy field; the magnetic tunnel junction comprises a free layer and a reference layer, a barrier tunneling layer is arranged between the free layer and the reference layer, and the magnetic tunnel junction records information through the magnetization direction of the free layer; the protection layer is used for preventing the magnetic tunnel junction from being oxidized or corroded; the CoFe2O4 layer is used for reducing a current shunting effect of the spin-orbit torque layer in the writing process, a load is applied to CoFe2O4, the in-plane magnetic anisotropy field is provided through the inverse effect of magnetostriction, an external magnetic field needed by torque switching is provided for the free layer, the switching torque inducedby the spin-orbit torque without the external field is achieved, the switching current is reduced, and the power consumption is reduced.
Description
technical field [0001] The invention relates to the technical field of magnetic memory, in particular to a device and a preparation method for driving a magnetic flip magnetic moment without an external field spin-orbit moment. Background technique [0002] With the development of computer technology, it is difficult to maintain Moore's Law solely relying on the progress of semiconductor technology. Therefore, it has become a recognized and feasible method to make up for the shortcomings in the current computer system to improve performance through structural changes and the introduction of new principles and devices. In the current computer architecture, the main bottleneck that limits the improvement of computing performance is the memory. For this reason a large number of novel memory technologies are proposed and are being extensively studied, such as phase-change memory (PRAM), ferroelectric memory (FeRAM), resistive memory (RRAM), and the field magnetic memory ( MAM)...
Claims
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IPC IPC(8): H01L43/08H01L43/10H01L43/12H10N50/10H10N50/01
CPCH10N50/85H10N50/10H10N50/01
Inventor 吴东阳毕冲卢年端李泠刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI