Device and method for removing pollution particles on surface of mask protective film

Abstract

The invention discloses a device for removing pollution particles on the surface of a mask protective film. The device comprises a charge generating device and a charge eliminating device; the charge generating device can generate an air flow with charges; the airflow flows from the charge generating device to the charge eliminating device; the charge eliminating device can eliminate or transfer charges; and the mask protective film surface pollution particle removal device is arranged above a mask plate bearing table. The device can effectively remove particles which cannot be identified by naked eyes, avoids direct contact between gas and the mask protective film, avoids rupture or looseness of the protective film, and prolongs the normal service life of the mask.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, and more particularly, to a device and method for removing contamination particles on the surface of a mask protection film. Background technique [0002] The reticle is an indispensable part of the photolithography process. There is a design pattern on the mask plate, and light passes through it, projecting the design pattern on the photoresist. The mask protection film is a layer of transparent film attached to the aluminum alloy frame to prevent dust from falling on the patterned side of the mask. When the particle size falling on the glass substrate and protective film is large enough, the shadow it produces on the wafer will leave patterns on the photoresist and must be cleaned off. [0003] The traditional mask surface pollution particle treatment method is to use dry N2 purge, find the position of the particle under the microscope, and then move the N2 nozzle...

AI Technical Summary

Problems solved by technology

However, the material of the protective film is generally polymer resin with a thickness of about 1um. The vertical component Fy of the N2 airflow is not conducive to particle desorption, and at the same time increases the risk of protective film rupture, resulting in the mask being sent for cleaning and maintenance or scrapped, such as figure 2 ; On the other hand, repeated pressure is applied many times, and the protective film "looses", and the center is bent downward under the action of gravity, which causes the image of the exposed pattern to be enlarged after passing through the protective film, such as image 3

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