Element
A technology of components and transparent electrodes, which is applied in the field of components, can solve the problems of taking out terminals, etc., and achieve the effect of less performance degradation or deviation
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Embodiment 1
[0077] The photoelectric conversion characteristics of the solar cells of Examples 1 to 2 and Comparative Examples 1 and Comparative Example 1 were measured at the output measuring method of the Silicone Crystant Solar Battery of Silicone Crystals according to JIS C 8913: 1998. In the solar optical simulator (SMO-250PV type) combination is equivalent to the atmospheric mass filter of AM 1.5G, adjusting the secondary standard Si solar cell to 100MW / cm 2 The amount of light is measured, and the test sample of the perovskite solar cell is irradiated with the test sample of the perovskite solar cell, and the source table (KEITHLE INSTRUMENTSINC. System, the 2400 generic source table) is used to measure the IV curve characteristics, and derive the measurement of IV curve characteristics. Short-circuit current (ISC), open circuit voltage (VOC), filler factor (FF), series resistance (RS), and parallel resistance (RSH). Moreover, the short circuit current density (JSC) and photoelectric...
Embodiment 2
[0088] In addition to the average film thickness of the back electrode becomes 80 nm, the elements are fabricated in the same manner as in Example 1. As a result, the value of power generation is 7.9% in 1 SUN, and the maximum output of 200 Krex is 16.3μW / cm. 2 . If the average film thickness of the back side electrode is 100 nm or more, for example, when irradiating 1 SUN-like strong light or 200LX-like weak light, it can be obtained due to strong illuminance of incident light. The maximum output is considered to be preferred.
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