Preparation process method of silica gel layer for bearing silicon wafer

Abstract

The invention relates to the technical field of silicon wafer base bearing films, and provides a preparation process method of a silica gel layer for bearing a silicon wafer. The silica gel layer comprises the following components: 80-120 parts of silica gel, 8-12 parts of anti-bonding oil and 1-5 parts of graphite powder. The preparation process method comprises the following process steps of: 1, uniformly stirring and mixing the silica gel, the anti-bonding oil and the graphite powder according to a specific ratio; 2, uniformly smearing the silica gel mixture formed in the step 1 on a base; 3, arranging a limiting piece on the silica gel mixture; and 4, drying the silica gel layer. The preparation process method overcomes the defects in the prior art, is reasonable in design and compact in structure, and solves the problem that an existing silicon wafer base is poor in heat dissipation effect when bearing a silicon wafer. The silica gel layer which is soft in texture and good in heat conduction and electric conduction effects is prepared through a simple technological method to bear a silicon wafer. Meanwhile, the processing technology is simple, monopoly can be eliminated, cost and time consumption are reduced, and the method has high practicability and is suitable for popularization.

Description

technical field [0001] The invention relates to the technical field of a silicon wafer base bearing film, in particular to a preparation process for a silica gel layer used for bearing a silicon wafer. Background technique [0002] Silicon wafer is an indispensable core product in the semiconductor field. During the processing of silicon wafers, the base needs to be used as a carrier. The general base is made of metal, usually an aluminum plate. If the silicon wafer is directly connected to the base Direct contact can easily lead to scratches and damage to the silicon wafer. At the same time, the surface of the general metal base is not too smooth, which can easily lead to uneven contact with the silicon wafer and damage to the silicon wafer. In addition, the contact area between the silicon wafer and the metal base is small, and the It is beneficial to heat dissipation, so in order to avoid the above problems, a film is attached on the metal base in the prior art to avoid t...

AI Technical Summary

Problems solved by technology

[0008] Aiming at the deficiencies of the prior art, the present invention provides a method for preparing a silica gel layer for carrying silicon wafers, which overcomes the deficiencies of the prior art, has a reasonable design and a compact structure, and solves the problem that the existing silicon wafer base For the problem of poor heat dissipation when carrying silicon wafers, the present invention prepares a silicone layer with soft texture and good thermal and electrical conductivity through a simple process to realize the bearing of silicon wafers. At the same time, the processing technology is simple, which can eliminate monopoly and reduce costs and time consumption, has strong practicability and is suitable for promotion