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One-dimensional reciprocating motion growth method for KDP crystals

A reciprocating motion and growth method technology, which is applied in crystal growth, single crystal growth, single crystal growth, etc., to achieve the effect of improving the quality of crystal growth

Pending Publication Date: 2021-06-29
CHONGQING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Potapenko [Potapenko, SY. Formation of solution inclusions in crystal under effect of solution flow. Journal of crystal growth, 1998, 186 (3): 446-455] the conclusion that the reversible shear flow makes the temporary position stable in the face of any disturbance has not been put into practical application, indeed a regret

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  • One-dimensional reciprocating motion growth method for KDP crystals
  • One-dimensional reciprocating motion growth method for KDP crystals

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Embodiment Construction

[0016] The present invention will be further described in detail through the following embodiments in conjunction with the accompanying drawings, but they cannot be used to limit the scope of the present invention.

[0017] A kind of KDP crystal one-dimensional reciprocating motion growth method, comprises following five steps:

[0018] 1) Preparation of growth solution: prepare a saturated solution at 45-75°C according to the solubility formula;

[0019] 2) Filtration and superheated solution: filter the solution with a microporous membrane to obtain a pure solution; superheat the pure solution at a constant temperature of 15-20°C above the saturation temperature for more than 24 hours to obtain a growth solution;

[0020] 3) Fixing the seed crystal 1: paste the cut seed crystal 1 on the top of the stem 4, and the z direction is perpendicular to the stem 4;

[0021] 4) Installation and sealing of the growth device: place the crystal incubator 3 filled with the growth solutio...

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Abstract

The invention relates to a one-dimensional reciprocating motion growth method for KDP crystals. The method has the following two advantages: firstly, three kinds of flow areas, including an incident flow stagnation area, a back flow convection vortex cell area and a side wall boundary layer downstream area, in which wrappage are extremely easy to form in a traditional crystal transformation method and traditional two-dimensional and three-dimensional motion methods are avoided; and secondly, the one-dimensional symmetry of the KDP crystals is fully utilized, reversible shear flow is realized through reciprocating motion, and the reversible shear flow has excellent hydrodynamic conditions for growing high-quality crystals and is a steady mode for growing a theoretically-predicted crystal face morphology. According to the method, rapid growth of the high-quality KDP crystals is facilitated, and a better solution is provided for large-size and high-quality KDP crystals required by an inertial confinement laser nuclear fusion (ICF) laser device.

Description

technical field [0001] The invention belongs to the field of artificial crystal growth, and in particular relates to a one-dimensional reciprocating motion growth method for KDP crystals, which is suitable for fast, high-quality and all-round growth of KDP crystals. Background technique [0002] KDP(KH 2 PO 4 , Potassium dihydrogen phosphate) crystal is a water-soluble crystal with excellent optical properties and high laser damage threshold, easy to achieve phase matching, and can grow large-sized crystals. The material of choice for medium-frequency doubler converters and electro-optical switches. In the KDP crystal growth, the crystal rotation is often used to reduce the thickness of the boundary layer to increase the crystal growth rate, which is called the crystal conversion method. There is an Achilles heel in the crystal transformation method, that is, there are three kinds of flow regions that are easy to form inclusions on the crystal plane: the upstream stagnant...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B7/08C30B29/22
CPCC30B7/08C30B29/22
Inventor 李明伟周思佳刘杭周川尹华伟胡志涛宋洁
Owner CHONGQING UNIV