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TDDB test structure, TDDB test system and test method thereof

A technology of testing structure and testing system, applied in testing dielectric strength, single semiconductor device testing, semiconductor working life testing, etc., can solve the problems of low efficiency and long time TDDB testing, so as to shorten testing time and improve testing efficiency. Effect

Pending Publication Date: 2021-06-29
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to ensure the statistical significance of the test results, the number of samples of the same type of dielectric to be tested is generally more than 15, and there are many types of dielectric samples to be tested. A complete TDDB test takes a long time and is inefficient

Method used

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  • TDDB test structure, TDDB test system and test method thereof
  • TDDB test structure, TDDB test system and test method thereof
  • TDDB test structure, TDDB test system and test method thereof

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Embodiment Construction

[0024] It can be known from the background art that the TDDB test structure and its test method in the prior art take too long, and the efficiency needs to be improved. Now combine the TDDB test structure and its method to analyze the cause of the problem.

[0025] figure 1 A schematic diagram of a TDDB test structure is shown.

[0026] refer to figure 1 , the TDDB test structure includes a plurality of test units 10 connected in parallel, each of the plurality of test units 10 includes a dielectric test sample, one end of the dielectric test sample is grounded, and the other end is connected to a SMU (Source Measure Unit, source measure unit), each of the dielectric samples corresponds to one SMU. The SMU applies a continuous voltage to the dielectric sample and measures the change of current with time. When the dielectric sample breaks down, the current jumps, and the current jump time is recorded as the breakdown time. At this time, the TDDB test is limited by the numbe...

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PUM

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Abstract

The invention relates to a TDDB test structure, a TDDB test system and a test method thereof. The TDDB test structure comprises a plurality of test units connected in parallel between a voltage source and a ground, wherein each of the plurality of test units comprising a dielectric test sample connected to the ground, and a control module which is connected between the dielectric test sample and the voltage source; and each control module is switched on under an enable signal, and is switched off when the corresponding dielectric test sample is broken down. According to the TDDB test structure, the TDDB test system and the test method thereof, the control modules are switched on when an enable signal source is loaded, and are switched off when the dielectric test samples are broken down. After the dielectric test samples are broken down and turned off, the test of other test units is still continued. Therefore, the plurality of test units can be measured at the same time and do not need to be tested one by one, the test time is greatly shortened, and the test efficiency is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a TDDB test structure, a TDDB test system and a test method thereof. Background technique [0002] In semiconductor manufacturing, TDDB (Time Dependent Dielectric Breakdown, Time Dependent Dielectric Breakdown) test is an important reliability test method, which can be used to predict the service life of semiconductor devices. [0003] The conventional TDDB test is to apply a voltage source to one end of the dielectric sample to be tested, and the other end is grounded to continuously monitor the current passing through the dielectric sample to be tested. Once the dielectric sample to be tested breaks down and causes a short circuit, a sudden jump will be detected High current, recording the time at this time, can evaluate the service life of the device. [0004] TDDB testing usually requires testing the dielectric samples to be tested one by one. In order to ensure t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/12G01R31/26
CPCG01R31/1227G01R31/2603G01R31/2642
Inventor 蒋昊
Owner SEMICON MFG INT (SHANGHAI) CORP