Method and device for measuring on-resistance of field effect transistor

Abstract

The invention discloses a method and device for measuring the on-resistance of a field effect transistor. The measuring method comprises the following steps: inputting on-voltage to conduct a field effect transistor to be measured; inputting the same test current to a plurality of source pins and a plurality of drain pins of the field effect transistor chip, and measuring voltage drop correspondingly generated on each pin of the field effect transistor chip; judging whether the constant current source is in good contact with a loading line on a pin of the field effect transistor chip according to the test current and the voltage drop; according to the voltage drop, judging whether the voltage measuring meter is in good contact with a test line on a pin of the field effect transistor chip or not; and when the contact between the constant current source and the loading line and the contact between the voltage measurement meter and the test line are good, obtaining the on-resistance of the field effect transistor to be tested according to the test current and the voltage drop. According to the method and device, possible test errors in the measurement process can be easily judged, the test accuracy is improved, and the measurement method is simple.

Description

technical field [0001] The invention relates to the testing field of field effect transistors, in particular to a method and device for measuring the on-resistance of field effect transistors. Background technique [0002] To verify whether the electrical parameters of the manufactured FET (Field Effect Transistor, field effect transistor) device meets the expected standard, it is necessary to test the electrical parameters of the manufactured field effect transistor. With the continuous development of FET integrated devices to low power consumption, the on-resistance (R dson ) test is particularly important. R dson It is a key test parameter, and its size directly determines the power consumption when the field effect transistor is turned on. R dson The test is the maximum impedance between the drain and the source when the field effect transistor to be tested is loaded with a certain gate-source voltage Vgs and drain current Id when the field effect transistor is turne...

AI Technical Summary

Problems solved by technology

[0003] For the on-resistance test of multi-pin bonded field effect transistors, the connection method of relays or fixture probes is usually used to short-circuit different pins of the same signal before testing, but this measurement method will introduce contact resistance The test error brought by it leads to inaccurate measurement results

At the same time, it is not easy to judge the situation of poor contact. It can only be judged by retesting, which is a waste of time and manpower.

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