Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ozone oxidation process and ozone oxidation system

An ozone oxidation and process technology, applied in photovoltaic power generation, electrical components, circuits, etc., can solve the problems of low ozone and inability to effectively form high-quality silicon oxide films, so as to improve production efficiency, avoid decomposition problems, and avoid decomposition. Effect

Pending Publication Date: 2021-07-02
上海钧乾智造科技有限公司
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this scheme, due to the extremely low content of ozone in the ozone water, high-quality silicon oxide films cannot be effectively formed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ozone oxidation process and ozone oxidation system
  • Ozone oxidation process and ozone oxidation system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Obviously, the described embodiments are part of the present invention Examples, not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those skilled in the art to which the present invention belongs. As used herein, "comprising" and similar words mean that the elements or items appearing before the word include the elements or items listed after the word and their equivalents, without excluding other el...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an ozone oxidation process. A to-be-treated substrate is conveyed to a preheating unit through a conveying unit in advance; the preheating unit is used for heating the substrate to 50-100 DEG C to obtain a preheated substrate; the transmission unit conveys the preheated substrate to the process unit, and the preheated substrate is subjected to oxidation treatment through the process unit; and the conveying speed of the conveying unit is 5-40 mm / s, and the conveying time of the preheated substrate in the preheating unit is 25-100 seconds, so that the temperature of the preheated substrate in the process unit is lower than 90 DEG C. The preheating unit and the process unit work independently, so that after the substrate in the preheating unit reaches the reaction temperature, the substrate is conveyed to the process unit for oxidation reaction, reaction gas cannot be decomposed due to too high temperature, and the concentration of the reaction gas is effectively guaranteed. In addition, the invention also discloses an ozone oxidation system.

Description

technical field [0001] The invention relates to the technical field of photovoltaic equipment, in particular to an ozone oxidation process and an ozone oxidation system. Background technique [0002] In high-efficiency solar cells, the silicon oxide layer can be used as a barrier layer against PID (Potential Induced Degradation, potential-induced degradation), a passivation layer for PERC cells (Passivated Emitter and Rear Cell) and a tunneling functional layer for TOPCon cells. [0003] The conventional silicon oxide film preparation method is high-temperature thermal oxidation, but the high-temperature thermal oxidation process consumes a lot of energy, the temperature passes 1000 degrees, and the speed is slow, and the process takes a long time. The high-temperature environment has an adverse effect on the quality of silicon wafers, which will lead to some low-quality The quality of silicon wafers deteriorates, and the minority carrier life of polysilicon is also prone to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18H01L31/0216H01L31/041H01L21/67
CPCH01L31/1876H01L31/02167H01L31/041H01L21/67098Y02E10/50
Inventor 韩培丁
Owner 上海钧乾智造科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products