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NMOS power tube gate driving module, driving circuit and switching power supply

A gate drive and drive module technology, applied in the field of switching power supplies, can solve the problems of complex internal circuit structure, large error, and poor current accuracy, and achieve the effect of simple structure, small error, and low cost

Active Publication Date: 2021-07-02
SHANGHAI XINLONG SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] When an NMOS power tube is used as a power switch tube in a switching power supply chip, the drive circuit of the NMOS power tube often needs to add an external BOOST capacitor to provide a stable power supply for the drive circuit, and a corresponding capacitor charging circuit, level shifting circuit and Drive circuit, the internal circuit structure is complex
Moreover, in the prior art, overcurrent detection usually realizes overcurrent protection by sampling part of the power tube current and calculating the current value of the entire chip power tube through proportional conversion. The problem of poor current accuracy

Method used

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  • NMOS power tube gate driving module, driving circuit and switching power supply
  • NMOS power tube gate driving module, driving circuit and switching power supply
  • NMOS power tube gate driving module, driving circuit and switching power supply

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Embodiment Construction

[0025] In order to facilitate the understanding of those skilled in the art, the present invention will be further described in detail below in conjunction with specific embodiments.

[0026] The embodiment of the present invention firstly provides a switching power supply, please refer to figure 1 , including a power supply circuit 20 , an output circuit 30 and a switching power supply drive circuit 10 . One end of the switching power supply driving circuit 10 is connected to the power supply circuit 20 , and the other end of the switching power supply driving circuit 10 is connected to the output circuit 30 . The switching power supply is a step-up switching power supply.

[0027] In this embodiment, the power supply circuit 20 includes an input DC power supply vcc and an input filter capacitor C1 connected in parallel.

[0028]The output circuit 30 includes a Schottky diode D1, an energy storage capacitor C2 and a load resistor RL. The anode of the Schottky diode D1 is co...

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PUM

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Abstract

The invention provides an NMOS power tube gate driving module, a driving circuit and a switching power supply, and relates to the technical field of switching power supplies, and the NMOS power tube gate driving module is realized by adopting a transistor integrated circuit process. The internal circuit of the NMOS power tube gate driving module is simple, and the NMOS power tube gate driving module is suitable for a switching power supply driving circuit and a boost switching power supply. By quickly opening and closing the NMOS power tube, the problem of large opening and closing loss when the NMOS power tube is applied to a switching power supply chip is solved, and the NMOS power tube gate driving module has an over-current detection function and has the advantages of simple structure, low cost and high reliability.

Description

technical field [0001] The invention relates to the technical field of switching power supplies, in particular to an NMOS power transistor grid drive module, a driving circuit and a switching power supply. Background technique [0002] The power tube inside the switching power supply chip has two types: power triode and power MOS tube. The power MOS tube is divided into PMOS power tube and NMOS power tube. The control circuit of the tube as a switch tube is completely different. [0003] Different types of power MOS tubes have different internal majority carriers when they work, and the on-resistance Rdson of NMOS power tubes is smaller than that of PMOS power tubes under the same unit area. In the case of the same on-resistance Rdson, the inter-electrode parasitic capacitance Ciss of the NMOS power transistor is smaller than that of the PMOS power transistor. The greater the on-resistance Rdson of the power MOS tube, the greater the conduction loss of the switching power ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02H7/12H02H1/00
CPCH02H1/0007H02H7/1203H02M1/08
Inventor 贾生龙李瑞平
Owner SHANGHAI XINLONG SEMICON TECH CO LTD
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