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Oxidation method for production of imbricated and half large-size silicon wafer battery

A large-size, silicon-wafer technology, applied in the field of oxidation for the production of shingled and half-chip large-size silicon wafer cells, can solve the problems of high cost of oxidation furnace and inability to meet oxidation requirements.

Active Publication Date: 2021-07-06
DONGFANG HUANSHENG PHOTOVOLTAIC (JIANGSU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the large-sized whole silicon wafer (such as M9190x190mm, M10 200x200mm, M12 210x210mm) has exceeded the limit range of the existing oxidation furnace tube diameter, it cannot meet the oxidation demand, and the cost of transforming the oxidation furnace is high

Method used

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  • Oxidation method for production of imbricated and half large-size silicon wafer battery

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Take 210x210mm silicon wafer as an example for illustration.

[0050] An oxidation method for the production of shingled and half-sheet large-scale silicon wafer cells, comprising the following steps,

[0051] Cutting the silicon wafer to be oxidized, dividing the silicon wafer into two to form a half silicon wafer: cutting with a laser, cutting 210x210mm into 210x105mm to form a half silicon wafer 1;

[0052] Plug-in is used to insert the half-chip silicon chip 1 on the quartz boat 2;

[0053] Carry out half-wafer oxidation: When the oxidation furnace is on standby, set the standby temperature from the furnace mouth to the furnace tail, and set the first temperature zone, the second temperature zone, and the third temperature zone in sequence along the furnace mouth to the furnace tail. temperature zone, the fourth temperature zone and the fifth temperature zone, set the temperature in the first temperature zone to 790°C, set the temperature in the second temperature ...

Embodiment 2

[0060] Take 210x210mm silicon wafer as an example for illustration.

[0061] An oxidation method for the production of shingled and half-sheet large-scale silicon wafer cells, comprising the following steps,

[0062] Cutting the silicon wafer to be oxidized, dividing the silicon wafer into two to form a half silicon wafer: cutting with a laser, cutting 210x210mm into 210x105mm to form a half silicon wafer 2;

[0063] Plug-in is used to insert the half-piece of silicon wafer on the quartz boat 3;

[0064] Carry out half-wafer oxidation: When the oxidation furnace is on standby, set the standby temperature from the furnace mouth to the furnace tail, and set the first temperature zone, the second temperature zone, and the third temperature zone in sequence along the furnace mouth to the furnace tail. temperature zone, the fourth temperature zone and the fifth temperature zone, set the temperature in the first temperature zone to 810°C, set the temperature in the second temperatu...

Embodiment 3

[0071] Take 210x210mm silicon wafer as an example for illustration.

[0072] An oxidation method for the production of shingled and half-sheet large-scale silicon wafer cells, comprising the following steps,

[0073] Cutting the silicon wafer to be oxidized, dividing the silicon wafer into two to form a half silicon wafer: cutting with a laser, cutting 210x210mm into 210x105mm to form a half silicon wafer 1;

[0074] Plug-in is used to insert the half-chip silicon chip 1 on the quartz boat 2;

[0075] Carry out half-wafer oxidation: When the oxidation furnace is on standby, set the standby temperature from the furnace mouth to the furnace tail, and set the first temperature zone, the second temperature zone, and the third temperature zone in sequence along the furnace mouth to the furnace tail. temperature zone, the fourth temperature zone and the fifth temperature zone, set the temperature in the first temperature zone to 800°C, set the temperature in the second temperature ...

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Abstract

The invention provides an oxidation method for producing an imbricated and half large-size silicon wafer battery, and the method comprises the following steps: cutting a silicon wafer to be oxidized, and dividing the silicon wafer into two parts to form half silicon wafers; inserting the half silicon wafer by adopting a direct insertion mode; and oxidizing the half silicon wafer. The invention has the beneficial effects that the device is used for oxidizing a large-size silicon wafer, cutting the silicon wafer into half silicon wafers, and oxidizing the silicon wafer by adopting a direct insertion type wafer insertion manner, so the transformation cost is reduced, and the silicon wafer oxidation requirement is met.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to an oxidation method used in the production of shingled and half-piece large-size silicon wafer cells. Background technique [0002] With the surge in demand for high-power solar photovoltaic modules in the solar photovoltaic power generation market, shingled and half-cut solar photovoltaic modules have become mainstream products for high-power modules. Large-size silicon wafers (such as M6166x166mm, M9 190x190mm, M10 200x200mm, M12 210x210mm) can be combined with shingled and half-chip module technologies to achieve higher power module production. Because the large-sized whole silicon wafer (such as M9190x190mm, M10 200x200mm, M12 210x210mm) has exceeded the limit range of the existing oxidation furnace tube diameter, it cannot meet the oxidation demand, and the cost of modifying the oxidation furnace is high. Contents of the invention [0003] In view of the above problem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/1804H01L31/02167Y02P70/50Y02E10/547
Inventor 王鹏何秋霞马擎天
Owner DONGFANG HUANSHENG PHOTOVOLTAIC (JIANGSU) CO LTD