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Method for improving quality of silicon carbide crystals

A technology of crystal quality and silicon carbide, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problem of low yield rate of silicon carbide single crystal

Active Publication Date: 2021-07-09
哈尔滨科友半导体产业装备与技术研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the technical problem of low yield rate of silicon carbide single crystal grown by the existing physical vapor transport method, and provides a method for improving the quality of silicon carbide crystal

Method used

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  • Method for improving quality of silicon carbide crystals
  • Method for improving quality of silicon carbide crystals
  • Method for improving quality of silicon carbide crystals

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Experimental program
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Effect test

Embodiment 1

[0023] Embodiment 1: The method for improving the quality of silicon carbide crystals of the present embodiment is specifically:

[0024] 1. The silicon carbide crystal growth furnace is composed of a graphite crucible 1, an upper cover 2, a lower heater 3, a middle heater 4, and an upper heater 5, wherein the lower heater 3 and the middle heater are respectively arranged outside the graphite crucible 1 from bottom to top The device 4 and the upper heater 5 are used for heating; the upper cover 2 is arranged on the top of the graphite crucible 1, and the upper cover 2 is used to seal the graphite crucible 1 and to fix the silicon carbide seed crystal 6; the inner diameter of the graphite crucible 1 is 170mm;

[0025] In the graphite crucible 1, three layers of materials are filled from bottom to top, wherein:

[0026] The bottom layer is a silicon carbide powder layer 7; the thickness of the bottom layer is 15mm;

[0027] The central part of the middle layer is macroporous po...

Embodiment 2

[0037] Embodiment 2: the method for improving the quality of silicon carbide crystals of this embodiment, specifically:

[0038] 1. The silicon carbide crystal growth furnace is composed of a graphite crucible 1, an upper cover 2, a lower heater 3, a middle heater 4, and an upper heater 5, wherein the lower heater 3 and the middle heater are respectively arranged outside the graphite crucible 1 from bottom to top The device 4 and the upper heater 5 are used for heating; the upper cover 2 is arranged on the top of the graphite crucible 1, and the upper cover 2 is used to seal the graphite crucible 1 and to fix the silicon carbide seed crystal 6; the inner diameter of the graphite crucible 1 is 170mm;

[0039] In the graphite crucible 1, three layers of materials are filled from bottom to top, wherein:

[0040] The bottom layer is a silicon carbide powder layer 7; the thickness of the bottom layer is 14mm;

[0041]The central part of the middle layer is macroporous porous graph...

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Abstract

The invention discloses a method for improving the quality of silicon carbide crystals and relates to a growth method of the silicon carbide crystals. The invention aims to solve the technical problem of low yield of silicon carbide single crystals grown by an existing physical vapor transport method. The method comprises the following steps: 1, filling three layers of materials in a graphite crucible for growing silicon carbide crystals from bottom to top, wherein the bottom layer is a silicon carbide powder layer, the central part of the middle layer is macroporous porous graphite, and the peripheral part of the middle layer is microporous porous graphite, the central part of the upper layer is large-grain silicon carbide polycrystals, and the peripheral part of the upper layer is small-grain silicon carbide polycrystals; 2, fixing the silicon carbide seed crystal at the inner lower part of the upper cover, and sealing the crucible; and 3, heating, and carrying out crystal growth to obtain the silicon carbide crystal. The yield of the silicon carbide crystals grown by adopting the method disclosed by the invention reaches over 50%, which is 2-3 times of that of an existing common charging method. The method can be applied to the field of silicon carbide crystal growth.

Description

technical field [0001] The invention relates to a method for growing silicon carbide crystals. Background technique [0002] Physical vapor transport (PVT) is a common method used to grow silicon carbide single crystals. The steps of this growth method are: the silicon carbide source powder is loaded into the bottom of the crucible, and the silicon carbide seed crystal is fixed on the top of the crucible, and the airtight Crucible, in which the silicon carbide source powder at the bottom is in the high temperature zone, and the silicon carbide seed crystal at the top is in the low temperature zone. crystallized to obtain a silicon carbide single crystal. During the PVT silicon carbide crystal growth process, the temperature at the edge of the crucible is higher than that at the center, and the edge generally sublimes faster. It is difficult to control the material at the edge and the middle to sublimate at the same rate, which will lead to the formation of denser silicon ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36
Inventor 不公告发明人
Owner 哈尔滨科友半导体产业装备与技术研究院有限公司