GaN device structure and preparation method thereof

Abstract

The invention provides a GaN device structure and a preparation method thereof, and the preparation method comprises the steps: preparing a GaN channel layer and an initial barrier layer on a substrate, preparing a gate region auxiliary structure, and preparing a doped barrier composite structure and a gate step auxiliary composite structure, wherein the gate step auxiliary composite structure penetrates through the doped barrier composite structure in a step shape, and each stage of gate step auxiliary structure gradually rises in the direction from the gate region to the drain electrode; removing the gate region auxiliary structure and the gate step auxiliary composite structure; preparing a source electrode and the drain electrode, and preparing a gate composite structure. By introducing the doped barrier composite structure, based on the gate region auxiliary structure and the gate step auxiliary structure, through multiple selective epitaxy, the doping concentration can be improved, and a low ohmic contact electrode can be realized; and through designing the stepped gate and the gate field plate, a stepped drain field plate can be further designed at the same time, the 2DEG concentration can be controlled, damage caused by the etching process is avoided, and the reliability is high.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device manufacturing, and in particular relates to a GaN device structure and a preparation method thereof. Background technique [0002] The research and application of GaN materials is the frontier and hotspot of global semiconductor research at present. It is a new type of semiconductor material for the development of microelectronic devices and optoelectronic devices. The third generation of semiconductor materials after semiconductor materials. It has properties such as wide direct band gap, strong atomic bond, high thermal conductivity, good chemical stability (hardly corroded by any acid) and strong radiation resistance. [0003] However, with the development and demand of technology, it is difficult to effectively improve the ohmic contact of the electrode in the GaN device structure. In addition, the formation of the gate field plate and the drain field plate in the existing proces...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a GaN device structure and its preparation method, which are used to solve the problems in the prior art that the ohmic contact of GaN devices is difficult to be effectively improved and the field plate preparation is easy to cause damage, etc.

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