Plasma enhanced atomic layer deposition equipment and method

Abstract

An embodiment of the present invention provides a plasma-enhanced atomic layer deposition equipment and method, the equipment includes: a precursor supply device, connected to the gas inlet structure of the two process chambers, for selectively supplying At least one of the process chambers provides precursor or purge gas; the reaction gas supply device communicates with the intake structure of the two process chambers, and is used to selectively supply at least one of the two process chambers Reactive gas; radio frequency device, connected to two process chambers, for selectively outputting radio frequency power to at least one of the two process chambers; pressure regulating device, connected to exhaust ports of the two process chambers Communication for independent chamber pressure control of the two process chambers. The plasma-enhanced atomic layer deposition equipment and method provided by the embodiments of the present invention add process debugging means, and do not need to equip each chamber with a precursor supply device, thereby reducing equipment cost.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a plasma-enhanced atomic layer deposition device and method. Background technique [0002] As a method of film deposition, atomic layer deposition (Atomic Layer Deposition, hereinafter referred to as ALD) has the advantages of good conformality, precise thickness control ability and excellent coverage ability for high aspect ratio pattern structures. Plasma Enhanced Atomic Layer Deposition (hereinafter referred to as PEALD) can avoid the use of high process temperature, and the choice of precursors is wide, which is a good supplement to the ALD method. [0003] However, both ALD equipment and PEALD equipment have the outstanding problem of low production capacity. In order to increase the productivity of PEALD equipment, an existing method is to use two process chambers to process two wafers at the same time, but, on the basis of each process chamber meeting the proces...

AI Technical Summary

Problems solved by technology

[0005] First, the chamber pressure and radio frequency related parameters of the two process chambers cannot be controlled independently, resulting in limitations in process debugging

For example, when there is a difference in the thickness of the film deposited in the two process chambers, the above-mentioned differences cannot be eliminated by individually adjusting the chamber pressure and radio frequency related parameters (such as radio frequency power, frequency, glow time, etc.) of each process chamber, Thereby reducing the flexibility of process debugging means

[0006] Second, the two process chambers must perform plasma reaction steps at the same time, resulting in other steps (introduction of precursors, purging, etc.) must also be carried out simultaneously, resulting in a single process method and poor process matching between chambers

Moreover, in order to realize the simultaneous introduction of precursors into two process chambers, each chamber needs to be equipped with a separate precursor source (such as a source bottle), but this will increase the cost of the precursor source and the complexity of the chamber structure

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