Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dot device and preparation method thereof

A quantum dot device and quantum dot technology, applied in the field of quantum dot devices and their preparation, can solve problems such as relying on high-resolution display

Inactive Publication Date: 2021-07-13
NANJING TECH CORP LTD
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of this disclosure is to provide a quantum dot device and its preparation method to solve the problem of relying on high-precision printing equipment to achieve high-resolution display in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot device and preparation method thereof
  • Quantum dot device and preparation method thereof
  • Quantum dot device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0031] According to a first aspect of the present disclosure, a method for preparing a quantum dot device is provided, the method comprising:

[0032] S1, disposing a photosensitive material on the substrate, the photosensitive material has a first group that can be crosslinked with each other and a second group that can be coordinated with the quantum dot;

[0033] S2, using a mask to expose and develop the photosensitive material, washing and removing the uncured photosensitive material, the first groups are cross-linked and polymerized to form a plurality of cured polymer anchor layers spaced apart from each other;

[0034] S3, setting the quantum dot composition on the substrate with the anchoring layer, the quantum dots in the quantum dot composition are coordinated with the second group to obtain multiple quantum dot layers anchored by the anchoring layer.

[0035] The mask plate has a specific shape and arrangement of hole-like pattern areas and masking areas, so that t...

example 1

[0068] S1. Prepare ITO glass

[0069] Put the ITO glass piece with the number engraved on the back into a glass dish filled with ethanol solution, and wipe the ITO surface clean with a cotton swab. Sonicate with acetone, deionized water, and ethanol in turn for 10 minutes, and blow dry with a nitrogen gun. Finally, place the cleaned ITO glass in oxygen plasma for 10 minutes.

[0070] S2. Preparation of Hole Injection Layer (HIL)

[0071] Spin-coat the cleaned ITO glass slides with Pedot:PSS in air at a rotational speed of 3000r / min and a spin-coating time of 45 seconds. After the spin coating is completed, place it in the air for annealing, the annealing temperature is 150° C., and the annealing time is 30 minutes. After the annealing was completed, the slides were quickly transferred to a glove box under a nitrogen atmosphere.

[0072] S3. Preparation of hole transport layer (HTL)

[0073] TFB (8-10mg / mL, chlorobenzene solution) Continue to spin-coat the glass / ITO / Pedot:...

example 2

[0082] The difference from Example 1 is S4-S5.

[0083] S41. Preparation of anchoring layer (TAL)

[0084] The photosensitive material 4-(vinyl)benzenemethanol (1mg / mL, ethanol solution) was spin-coated on the substrate prepared in the previous steps at 2000r / min, and the spin-coating time was 45 seconds. Use a mask to expose the photosensitive material (365 nm portable ultraviolet lamp for 10 min), and then use ethanol to spin coat and clean to obtain a patterned anchor layer.

[0085] S51. Preparation of quantum dot luminescent layer

[0086] Red light CdSe-CdS core-shell quantum dots (ligand is oleic acid), the optical density (OD) of the former is 70-80 at 400nm, dissolved in octane solvent. After annealing the glass / ITO / Pedot:PSS / HTL / TAL sheet, continue to spin-coat the quantum dot solution, the spin-coating speed is 2000r / min, and the spin-coating time is 45 seconds. Anneal at 60°C for 30min after spin coating. After the annealing is completed, it is cleaned by spin-...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a quantum dot device and a preparation method thereof, and the preparation method comprises the steps: S1, arranging a photosensitive material on a substrate, the photosensitive material having a first group which can be cross-linked with each other and a second group which can be coordinated and combined with quantum dots; S2, exposing and developing the photosensitive material by using a mask plate, cleaning to remove the uncured photosensitive material, and polymerizing the first groups through mutual crosslinking to form a plurality of cured polymer anchoring layers which are mutually spaced; and S3, arranging a quantum dot composition on the substrate with the anchoring layer, coorinating and combining quantum dots in the quantum dot composition with the second group, and obtaining a plurality of quantum dot layers anchored by the anchoring layer. The preparation of the quantum dot device with high resolution and relatively simple process is realized.

Description

technical field [0001] The present disclosure relates to the technical field of quantum dot devices, in particular, to a quantum dot device and a preparation method thereof. Background technique [0002] Quantum dot display technology is a hot research direction in recent years. The applications of quantum dots in display include photoluminescence and electroluminescence. High resolution is an important direction of display equipment. In the prior art, inkjet printing is used to prepare electroluminescent devices and photoluminescent devices (such as quantum dot color films) for display. Therefore, it mainly depends on the accuracy of inkjet printing equipment to improve Pixel resolution of quantum dot devices. High-speed printing equipment is expensive, and various difficulties arise in the process. A preparation method for quantum dot devices with high resolution and relatively simple process is proposed. Contents of the invention [0003] The purpose of the present d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/135H01L27/32H01L51/50H01L51/56
CPCG02F1/1354H10K59/38H10K50/115H10K71/00
Inventor 陈涛
Owner NANJING TECH CORP LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com